SI4409DY-T1-E3 Vishay, SI4409DY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI4409DY-T1-E3
• Description: P-CHANNEL 150-V (D-S) MOSFET
• Manufacturer: Vishay

Specifications of SI4409DY-T1-E3

• Rohs Compliant: YES
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.2 Ohms
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.9 A
• Power Dissipation: 2.2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Minimum Operating Temperature: - 55 C
• Lead Free Status / Rohs Status: Details

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
*The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 70485
S-71276–Rev. A, 02-Jul-07
6.0
4.8
3.6
2.4
1.2
0.0
0
25
D
Power, Junction-to-Foot
is based on T
T
C
50
- Case Temperature (°C)
75
J(max)
100
1.5
1.2
0.9
0.6
0.3
0.0
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
25
New Product
150
T
C
Current Derating*
50
- Case Temperature (°C)
75
100
1.6
1.3
1.0
0.6
0.3
0
0
125
Power Derating, Junction-to-Ambient
25
150
T
C
50
- Case Temperature (°C)
75
Vishay Siliconix
100
Si4409DY
www.vishay.com
125
150
5