SI4561DY-T1-E3 Vishay, SI4561DY-T1-E3 Datasheet - Page 7
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SI4561DY-T1-E3
Manufacturer Part Number
SI4561DY-T1-E3
Description
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,40V V(BR)DSS,7.2A I(D),SO
Manufacturer
Vishay
Specifications of SI4561DY-T1-E3
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.0355 Ohms, 0.035 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.6 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4561DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69730
S09-0220-Rev. C, 09-Feb-09
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.05
0.02
0.2
0.1
Duty Cycle = 0.5
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-2
10
-1
1
10
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
= P
Vishay Siliconix
t
2
DM
100
Z
thJA
thJA
t
t
Si4561DY
1
2
(t)
= 120 °C/W
www.vishay.com
1000
1
0
7