SI4561DY-T1-E3 Vishay, SI4561DY-T1-E3 Datasheet - Page 8
![no-image](/images/manufacturer_photos/0/6/697/vishay_sml.jpg)
SI4561DY-T1-E3
Manufacturer Part Number
SI4561DY-T1-E3
Description
TRANSISTOR,MOSFET,PAIR,COMPLEMENTARY,40V V(BR)DSS,7.2A I(D),SO
Manufacturer
Vishay
Specifications of SI4561DY-T1-E3
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.0355 Ohms, 0.035 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.6 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4561DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4561DY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
8
0.050
0.044
0.038
0.032
0.026
0.020
30
24
18
12
10
6
0
8
6
4
2
0
0.0
0
0
I
D
= 5 A
V
V
GS
GS
On-Resistance vs. Drain Current
0.5
6
8
V
= 4.5 V
= 10 V
DS
Output Characteristics
Q
V
g
- Drain-to-Source Voltage (V)
DS
- Total Gate Charge (nC)
I
D
= 20 V
- Drain Current (A)
Gate Charge
1.0
12
16
V
DS
V
= 10 V
GS
1.5
18
24
= 10 thru 4 V
V
DS
= 30 V
2.0
32
24
3 V
2.5
30
40
2500
2000
1500
1000
500
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0
0
I
C
D
On-Resistance vs. Junction Temperature
rss
C
= 5 A
- 25
oss
T
C
6
V
V
= 125 °C
GS
Transfer Characteristics
DS
T
1
0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
T
C
Capacitance
25
12
= 25 °C
C
S09-0220-Rev. C, 09-Feb-09
50
2
iss
Document Number: 69730
18
V
75
GS
= 10 V
T
100
V
C
3
GS
= - 55 °C
24
= 4.5 V
125
150
30
4