SI5401DC-T1-E3 Vishay, SI5401DC-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI5401DC-T1-E3
• Description: TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,5.2A I(D),LLCC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5401DC-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 32 mOhm @ 5.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5401DC-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73225
S-83054-Rev. B, 29-Dec-08
0.10
0.08
0.06
0.04
0.02
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
V
DS
Source-Drain Diode Forward Voltage
= 5.2 A
GS
0.2
= 10 V
On-Resistance vs. Drain Current
= 1.8 V
4
4
V
SD
T
Q
J
g
= 125 °C
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
I
D
- Drain Current (A)
Gate Charge
8
8
T
J
0.6
= 150 °C
12
12
0.8
T
J
= 25 °C
V
V
GS
GS
16
16
= 2.5 V
1.0
= 4.5 V
20
1.2
20
2000
1800
1600
1400
1200
1000
0.12
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
rss
D
- 25
GS
= 5.2 A
= 4.5 V, 2.5 V, 1.8 V
4
1
V
V
DS
0
T
C
GS
J
oss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
8
2
C
50
iss
Vishay Siliconix
12
3
75
Si5401DC
T
I
www.vishay.com
100
D
J
T
= 125 °C
= 5.2 A
J
16
= 25 °C
4
125
150
20
5
3