SI5424DC-T1-E3 Vishay, SI5424DC-T1-E3 Datasheet
SI5424DC-T1-E3
Specifications of SI5424DC-T1-E3
Related parts for SI5424DC-T1-E3
SI5424DC-T1-E3 Summary of contents
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... V GS ChipFET 1206 Bottom View Ordering Information: Si5424DC-T1-E3 (Lead (Pb)-free) Si5424DC-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy ...
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... Si5424DC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge Document Number: 73776 S-83054-Rev. B, 29-Dec- 2.4 3 Si5424DC Vishay Siliconix ° 125 ° 0.0 0.6 1.2 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 1500 1200 C iss 900 600 C oss 300 C rss Drain-to-Source Voltage (V) DS Capacitance 1.8 1 ...
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... Si5424DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° °C A 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.0 1.8 1 250 µA D 1.4 1.2 1.0 0.8 0.6 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.06 ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73776 S-83054-Rev. B, 29-Dec-08 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si5424DC Vishay Siliconix ...
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... Si5424DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... E 1.825 1.90 1.975 0.072 E 1.55 1.65 1.70 0.061 1 e 0.65 BSC L 0.28 − 0.42 0.011 S 0.55 BSC 5_Nom Package Information Vishay Siliconix Backside View DETAIL X INCHES Nom Max − 0.043 0.012 0.014 0.006 0.008 − 0.0015 0.120 0.122 ...
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... The addition of a further copper area and/or the addition of vias to other board layers will enhance the performance still further example of this method is implemented on the Vishay Siliconix Evaluation Board described in the next section (Figure 3). G THE VISHAY SILICONIX EVALUATION BOARD FOR THE SINGLE 1206-8 The ChipFET 1206-08 evaluation board measures 0 ...
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... AN811 Vishay Siliconix Front of Board ChipFETr THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 1206-8 ChipFET measured as junction-to-foot thermal resistance is 15_C/W typical, 20_C/W maximum for the single device. The “foot” is the drain lead of the device as it connects with the body. This is identical to the ...
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... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET Return to Index Return to Index www.vishay.com 2 ® 0.093 (2.357) 0.026 0.016 (0.650) (0.406) Recommended Minimum Pads Dimensions in Inches/(mm) 0.010 (0.244) Document Number: 72593 Revision: 21-Jan-08 ...
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