SI5424DC-T1-E3 Vishay, SI5424DC-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI5424DC-T1-E3
• Description: N-CHANNEL 30-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5424DC-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2.3V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 15V
• Power - Max: 6.25W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Configuration: Single Hex Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 6 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI5424DC-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73776
S-83054-Rev. B, 29-Dec-08
16
12
8
4
0
0
25
Package Limited
D
T
C
is based on T
50
Current Derating*
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
8
6
4
2
0
0
25
T
C
- Case Temperature (°C)
50
Power Derating
75
Vishay Siliconix
Si5424DC
100
www.vishay.com
125
150
5