SI8800EDB-T2-E1 Vishay, SI8800EDB-T2-E1 Datasheet
SI8800EDB-T2-E1
Specifications of SI8800EDB-T2-E1
Available stocks
Related parts for SI8800EDB-T2-E1
SI8800EDB-T2-E1 Summary of contents
Page 1
... Backside View Device Marking: 800 xxx = Date/Lot Traceability Code Ordering Information: Si8800EDB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
Page 2
... Si8800EDB Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge ...
Page 3
... On-Resistance vs. Drain Current Document Number: 66700 S10-1046-Rev. A, 03-May- ° - 1 2.0 2.5 3 Si8800EDB Vishay Siliconix T = 150 ° ° Gate-to-Source Voltage (V) GS Gate Current vs. Gate-Source Voltage ° 125 ° °C C 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics Total Gate Charge (nC) ...
Page 4
... Si8800EDB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.4 1.3 1.2 1 1.0 0.9 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 0. 0. ° 0. 0 ° 0. Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage www.vishay.com 0.1 75 100 125 150 ...
Page 5
... V at which DS(on) Safe Operating Area, Junction-to-Ambient 0.8 0.6 0.4 0.2 0.0 100 125 150 25 = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper Si8800EDB Vishay Siliconix 100 μ 100 ms 100 is specified 50 75 100 125 T - Ambient Temperature (°C) A Power Derating www ...
Page 6
... Si8800EDB Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...
Page 7
... Note 4 Solder Mask ~ Ø 0.215 Millimeters Nom. Max. 0.357 0.400 0.157 0.187 0.200 0.213 0.175 0.185 0.400 0.200 0.220 0.800 0.840 Si8800EDB Vishay Siliconix Inches Min. Nom. Max. 0.0124 0.0141 0.0157 0.0050 0.0062 0.0074 0.0074 0.0079 0.0084 ...
Page 8
... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...