SI8800EDB-T2-E1 Vishay, SI8800EDB-T2-E1 Datasheet - Page 2

• Manufacturer Part Number: SI8800EDB-T2-E1
• Description: N-CHANNEL 20-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8800EDB-T2-E1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8.3nC @ 8V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Gate Charge Qg: 5.5 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.095 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SI8800EDB-T2-E1TR

Si8800EDB
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
GS(th)
DS
Temperature Coefficient
Temperature Coefficient
b
a
a
J
= 25 °C, unless otherwise noted
a
ΔV
Symbol
R
ΔV
V
GS(th)
I
t
t
t
t
I
I
V
DS(on)
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
d(on)
d(off)
I
GSS
DSS
Q
g
Q
R
SM
I
t
t
t
DS
t
t
DS
t
t
SD
S
rr
fs
gs
gd
a
b
r
f
r
f
rr
g
g
/T
/T
J
J
I
F
V
I
V
= 1.0 A, dI/dt = 100 A/µs, T
V
D
I
DS
DS
D
DS
≅ 1.0 A, V
≅ 1.0 A, V
= 10 V, V
V
= 20 V, V
V
= 10 V, V
V
V
V
V
V
V
V
V
V
V
V
DS
DS
I
GS
DS
DS
GS
GS
GS
GS
S
DS
DD
DD
DS
Test Conditions
= 1.0 A, V
= 0 V, V
= V
= 0 V, V
= 0 V, I
≥ 5 V, V
= 20 V, V
= 4.5 V, I
= 2.5 V, I
= 1.8 V, I
= 1.5 V, I
= 10 V, I
= 10 V, R
= 10 V, R
T
I
f = 1 MHz
D
GEN
C
GS
GS
GEN
GS
= 250 µA
GS
= 25 °C
, I
= 4.5 V, I
= 0 V, T
GS
= 4.5 V, R
D
= 8 V, I
GS
GS
D
= 8 V, R
D
GS
= 250 µA
D
D
D
D
GS
= 250 µA
L
L
= ± 4.5 V
= 1.0 A
= 1.0 A
= 1.0 A
= 1.0 A
= 0.5 A
= ± 8 V
= 4.5 V
= 10 Ω
= 10 Ω
= 0 V
= 0 V
J
D
D
= 55 °C
g
= 1.0 A
J
g
= 1.0 A
= 1 Ω
= 25 °C
= 1 Ω
Min.
0.4
20
10
S10-1046-Rev. A, 03-May-10
0.066
0.072
0.082
0.095
1100
Typ.
- 2.3
0.42
900
350
350
5.5
3.2
0.5
1.0
1.0
10
65
85
25
40
13
Document Number: 66700
18
5
8
5
0.080
0.090
0.105
0.150
Max.
± 0.5
1800
2200
130
170
700
700
1.0
± 6
8.3
5.0
0.7
1.5
10
50
80
15
25
10
1
mV/°C
Unit
µA
nC
kΩ
nC
ns
ns
Ω
ns
V
V
A
S
A
V