SI8800EDB-T2-E1 Vishay, SI8800EDB-T2-E1 Datasheet - Page 6

• Manufacturer Part Number: SI8800EDB-T2-E1
• Description: N-CHANNEL 20-V (D-S) MOSFET
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI8800EDB-T2-E1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 8.3nC @ 8V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: 4-MICRO FOOT®CSP
• Gate Charge Qg: 5.5 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.095 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 2.8 A
• Power Dissipation: 900 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: SI8800EDB-T2-E1TR

Si8800EDB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
Normalized Thermal Transient Impedance, Junction-to-Ambient (On 1" x 1" FR4 board with maximum copper)
0.05
-4
0.02
-4
0.2
0.1
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Ambient (on 1" x 1" FR4 board with minimum copper)
Duty Cycle = 0.5
0.1
Duty Cycle = 0.5
0.2
Single Pulse
Single Pulse
10
10
-3
-3
10
10
-2
-2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
10
-1
-1
1
1
10
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
P
DM
DM
JM
JM
- T
- T
t
t
A
1
A
1
S10-1046-Rev. A, 03-May-10
= P
= P
t
t
2
2
Document Number: 66700
DM
DM
100
100
Z
Z
thJA
thJA
thJA
thJA
t
t
t
t
1
2
1
2
(t)
(t)
= 185 °C/W
= 330 °C/W
1000
1000