ST103S08PFL1P Vishay, ST103S08PFL1P Datasheet - Page 3

• Manufacturer Part Number: ST103S08PFL1P
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),105A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of ST103S08PFL1P

• Breakover Current Ibo Max: 3150 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.73 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94365
Revision: 29-Apr-08
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned on current
Typical delay time
Maximum turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and off-state
leakage current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
maximum
minimum
For technical questions, contact: [e-mail]
SYMBOL
SYMBOL
SYMBOL
SYMBOL
P
Inverter Grade Thyristors
+ V
- V
dV/dt
R
I
R
I
P
dI/dt
RRM
V
V
T
DRM
G(AV)
I
I
I
GM
GD
T
thCS
GT
thJC
t
t
GM
GT
GD
Stg
(Stud Version), 105 A
d
q
GM
GM
J
,
T
higher value available on request
T
T
T
T
T
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Lubricated threads
See dimensions - link at the end of datasheet
T
T
Resistive load, gate pulse: 10 V, 5 Ω source
T
V
J
J
J
J
J
J
J
J
J
R
= T
= T
= 25 °C, V
= T
= T
= T
= T
= T
= 25 °C, V
= 50 V, t
J
J
J
J
J
J
J
maximum, I
maximum, linear to 80 % V
maximum, rated V
maximum, f = 50 Hz, d% = 50
maximum, t
maximum, rated V
maximum, V
p
A
DM
= 200 µs, dV/dt: See table in device code
= 12 V, R
= Rated V
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
TM
p
DRM
≤ 5 ms
= 100 A, commutating dI/dt = 10 A/µs
a
= Rated V
DRM
= 6 Ω
DRM
DRM
/V
applied
, I
Vishay High Power Products
RRM
TM
DRM
DRM
= 50 A DC, t
applied
,
, I
TM
= 2 x dI/dt
ST103SP Series
p
= 1 µs
- 40 to 125
- 40 to 150
TO-209AC (TO-94)
VALUES
VALUES
VALUES
VALUES
0.195
1000
(137)
(120)
0.25
0.80
500
200
0.08
15.5
130
30
40
20
20
10
25
14
www.vishay.com
5
5
5
3
UNITS
UNITS
UNITS
(lbf ⋅ in)
UNITS
N · m
A/µs
V/µs
K/W
mA
mA
mA
µs
W
°C
A
V
V
V
g
3