ST103S08PFL1P Vishay, ST103S08PFL1P Datasheet - Page 7

• Manufacturer Part Number: ST103S08PFL1P
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),105A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of ST103S08PFL1P

• Breakover Current Ibo Max: 3150 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.73 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94365
Revision: 29-Apr-08
100 000
10 000
10 000
1000
1000
100
100
10
10
10
Snubber circuit
R
C
V
D
s
s
100
t
t
p
0.1
= 22 Ω
= 0.15 µF
p
10
= 80 % V
10 000
1
0.001
5000
ST103S Series
Sinusoidal pulse
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
ST103S Series
Trapezoidal pulse
T
dI/dt = 100 A/µs
Pulse Basewidth (µs)
Pulse Basewidth (µs)
C
rated di/dt: 20 V, 10 Ω; t
≤ 30 % rated di/dt: 10 V, 10 Ω
t
r
100
100
= 60 °C
DRM
0.1
≤ 1 µs
1500
2500
0.2
0.5
1000
1
2 3
400
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20 joules per pulse
1000
1000
0.01
200
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
5 10
V
GD
100
I
r
GD
Inverter Grade Thyristors
≤ 1 µs
50 Hz
(Stud Version), 105 A
Device: ST103S Series
10 000
10 000
Fig. 13 - Frequency Characteristics
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
0.1
(a)
(b)
100 000
10 000
10 000
1
1000
1000
100
Frequency limited by P
100
10
10
10
Vishay High Power Products
10 000
t
p
t
p
(1) P
(2) P
(3) P
(4) P
5000
ST103S Series
Rectangular pulse
dI/dt = 50 A/µs
ST103S Series
Trapezoidal pulse
T
dI/dt = 100 A/µs
Pulse Basewidth (µs)
Pulse Basewidth (µs)
C
GM
GM
GM
GM
2500
100
100
10
= 85 °C
0.1
= 10 W, t
= 20 W, t
= 40 W, t
= 60 W, t
(1)
G(AV)
ST103SP Series
0.2
1500
0.5
(2)
1000
1
p
p
p
p
2 3
= 20 ms
= 10 ms
= 5 ms
= 3.3 ms
400
1000
1000
(3)
Snubber circuit
R
C
V
5 10
20 joules per pulse
s
s
D
200
(4)
= 22 Ω
= 0.15 µF
= 80 % V
100
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100
50 Hz
DRM
10 000
10 000
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