ST103S08PFL1P Vishay, ST103S08PFL1P Datasheet - Page 4

• Manufacturer Part Number: ST103S08PFL1P
• Description: SILICON CONTROLLED RECTIFIER,800V V(DRM),105A I(T),TO-209AC
• Manufacturer: Vishay

Specifications of ST103S08PFL1P

• Breakover Current Ibo Max: 3150 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• Forward Voltage Drop: 1.73 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 200 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ST103SP Series
Vishay High Power Products
Note
• The table above shows the increment of thermal resistance R
www.vishay.com
4
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
130
120
110
100
180
160
140
120
100
90
80
80
60
40
20
180°
120°
90°
60°
30°
0
0
0
Fig. 1 - Current Ratings Characteristics
10
10
RMS limit
Average On-State Current (A)
Average On-State Current (A)
20
20
180°
120°
ST103S Series
R
90°
60°
30°
thJC
30
30
30°
(DC) = 0.195 K/W
40
40
SINUSOIDAL CONDUCTION
50
50
60°
60
60
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90° 120°
Conduction angle
Conduction angle
70
70
ST083S Series
T
0.034
0.040
0.052
0.076
0.126
J
80
80
= 125 °C
Ø
Ø
Inverter Grade Thyristors
90
90
180°
Fig. 3 - On-State Power Loss Characteristics
(Stud Version), 105 A
100 110
100 110
thJC
when devices operate at different conduction angles than DC
RECTANGULAR CONDUCTION
0.025
0.042
0.056
0.079
0.127
180
160
140
120
100
130
120
110
100
90
80
70
80
60
40
20
0
Maximum Allowable Ambient Temperature (°C)
25
0
Fig. 2 - Current Ratings Characteristics
20
Average On-State Current (A)
30°
40
ST103S Series
R
50
thJC
60° 90°
60
(DC) = 0.195 K/W
TEST CONDITIONS
T
J
80
= T
75
J
100
Document Number: 94365
120° 180°
maximum
Conduction period
120
Revision: 29-Apr-08
100
140
Ø
DC
160
UNITS
125
K/W
180