SUD50P04-13L-E3 Vishay, SUD50P04-13L-E3 Datasheet - Page 3
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SUD50P04-13L-E3
Manufacturer Part Number
SUD50P04-13L-E3
Description
TRANSISTOR,MOSFET,P-CHANNEL,40V V(BR)DSS,60A I(D),TO-252AA
Manufacturer
Vishay
Datasheet
1.SUD50P04-13L-E3.pdf
(6 pages)
Specifications of SUD50P04-13L-E3
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.013 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
93700 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 73009
S-71660-Rev. B, 06-Aug-07
5000
4500
4000
3500
3000
2500
2000
1500
1000
100
500
80
60
40
20
80
70
60
50
40
30
20
10
0
0
0
0
0
0
C
rss
10
V
V
2
8
V
DS
DS
GS
- Drain-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
Output Characteristics
V
Transconductance
GS
20
16
4
Capacitance
= 10 thru 5 V
125 °C
C
2 V
C
oss
iss
30
24
6
T
C
= - 55 °C
4 V
3 V
40
32
8
25 °C
10
50
40
New Product
0.05
0.04
0.03
0.02
0.01
0.00
100
80
60
40
20
10
0
8
6
4
2
0
0.0
0
0
0.5
V
I
D
DS
V
8
= 50 A
GS
= 20 V
1.0
20
On-Resistance vs. Drain Current
V
= 4.5 V
GS
16
Q
Transfer Characteristics
g
1.5
- Gate-to-Source Voltage (V)
I
D
- Total Gate Charge (nC)
- Drain Current (A)
24
2.0
40
25 °C
Gate Charge
SUD50P04-13L
T
2.5
C
32
= 125 °C
Vishay Siliconix
3.0
60
40
3.5
V
GS
48
- 55 °C
www.vishay.com
= 10 V
4.0
80
56
4.5
100
5.0
64
3