AMMC-5025-W10 Avago Technologies US Inc., AMMC-5025-W10 Datasheet
AMMC-5025-W10
Specifications of AMMC-5025-W10
Related parts for AMMC-5025-W10
AMMC-5025-W10 Summary of contents
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... AMMC-5025 30KHz – 80 GHz TWA Data Sheet Description The AMMC-5025 MMIC is a 30KHz to 80GHz ultra broad- band traveling wave amplifier. In this operational frequency band, AMMC-5025 provides 8dB gain with better than 10dB input and output return losses. This performance is suitable for instrumentation and high speed digital communications ...
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Absolute Maximum Ratings Symbol Parameters [2] V Positive Supply Voltage d V Gate Supply Voltage g1 V Gate Supply Voltage g2 [2] P Power Dissipation Input Power in T Operating Channel Temp ...
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Typical Performance (Data obtained from on-wafer condition 25°C, Vdd = 5V, Idq = 0.1A -1 Frequency (GHz) Figure 1. Typical ...
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Typical Bias Dependency (Data obtained from on-wafer condition 25°C, Vdd = 5V out Ids=120mA Ids=100mA 2 Ids=80mA Frequency (GHz) ...
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... AMMC-5025 Performance Distributions Sample Size= 6,876 P1dB (Freq=20GHz (dBm) S11 (Freq=20 GHz) -31 -29 -27 -25 -23 (dB 7.7 7.9 -21 -19 -17 -17 S21 (Freq=20 GHz) 8.1 8.3 8.5 8.7 8.9 9.1 (dB) S22 (Freq=20 GHz) -16 (dB) -15 ...
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Typical Scattering Parameters , (T S11 S21 Freq [GHz] dB Mag Phase dB 1 -23.99 0.06 -73.62 12.31 2 -18.65 0.12 -94.96 11.73 3 -15.45 0.17 -108.86 11.44 4 -13.42 0.21 -119.17 11.21 5 -12.03 0.25 -129.52 10.89 6 ...
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Typical Scattering Parameters , (Continued) S11 S21 Freq [GHz] dB Mag Phase dB 42 -15.50 0.17 -158.31 7.61 43 -14.80 0.18 -153.02 7.73 44 -14.68 0.18 -140.97 7.52 45 -13.31 0.22 -154.87 7.61 46 -13.20 0.22 -149.60 7.70 47 ...
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... Note: 1. Data obtained from an on-wafer condition. Application and Usage AMMC-5025 is biased with a single positive drain supply ( negative gate supply ( control gate supply (V ). For best overall performance, g2 the recommended bias condition for the AMMC-5025 and I = 100 mA ...
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... Vd 1 10: Aux_Vd 15pF 10: 42: 1pF 480: 280: 50: Vg2 RF_IN Figure 9. Simplified schematic for AMMC5025 0 100 250 430 Vg2 Vd Vd_Aux 950 RF_IN 250 0 0 Figure 10. Bonding pad location 9 1600 950 700 RF_OUT Vg2 0 Vg1 1390 1600 RF OUT 50: Vg2 160: Vg1 50: ...
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VD=+5V Vg2: Gain control RF_IN Figure 11. Recommended assemble example Note performance degradation is seen due to ESD up to 300V HBM and 70V MM. The user is reminded that this device is ESD sensitive and needs to ...
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Names and Contents of the Toxic and Hazardous Substances or Elements in the Products Part Name Mercury Lead (Hg) (Pb) (Pb) 100pF capacitor : indicates that the content of the toxic and hazardous substance in all the homogeneous materials of ...