HSDL-4261 Avago Technologies US Inc., HSDL-4261 Datasheet

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HSDL-4261

Manufacturer Part Number
HSDL-4261
Description
Infrared Emitters IR Emitter 870nm Hig h Power
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of HSDL-4261

Wavelength
875 nm
Package / Case
T-1 3/4 (5 mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HSDL-4261
Manufacturer:
LITEON
Quantity:
40 000
High-Power T-1¾ (5mm) AlGaAs Infrared (870nm) Lamp
Data Sheet
Description
The HSDL-4261 Infrared emitter was designed for ap-
plications that require high power, low forward voltage
and high speed. It utilizes Aluminum Galium Arsenide
(AlGaAs) LED technology and is optimized for speed and
efficiency at emission wavelengths of 870nm. T he material
used produces high radiant efficiency over a wide range
of currents. The emitter is packaged in clear T-1¾ (5mm)
package.
5.0 ± 0.
0.50 ± 0.1
0.7 max.
5.8 ± 0.
CATHODE
FLAT
.54
Features
• Very High Power AlGaAs LED Technology
• 870nm Wavelength
• T-1¾ Package
• Low Cost
• Low Forward Voltage: 1.4V at 20mA
• High Speed: 15ns Rise Times
Applications
• Industrial IR Equipments
• IR Portable Instruments
• Consumer Electronics
• High Speed IR Communications
• IR Audio
• IR Telephones
P
art
N
umber
HSDL-4261
(Optical mouse etc)
(IR LANs, IR Modems, IR Dongles etc)
Lead Form
Straight
Shipping Option
Bulk

Related parts for HSDL-4261

HSDL-4261 Summary of contents

Page 1

... High-Power T-1¾ (5mm) AlGaAs Infrared (870nm) Lamp Data Sheet Description The HSDL-4261 Infrared emitter was designed for ap- plications that require high power, low forward voltage and high speed. It utilizes Aluminum Galium Arsenide (AlGaAs) LED technology and is optimized for speed and efficiency at emission wavelengths of 870nm material used produces high radiant efficiency over a wide range of currents. The emitter is packaged in clear T-1¾ (5mm) package. 5.0 ± ...

Page 2

Absolute Maximum Ratings at 25°C Parameter DC Forward Current Power Dissipation Reverse Voltage Operating Temperature Storage Temperature LED Junction Temperature Lead Soldering Temperature Notes: 1. Derate as shown in Figure 6. Electrical Characteristics at 25°C Parameter Forward Voltage Forward VoltageTemperature Coefficient Series Resistance Diode Capacitance Reverse Voltage Thermal Resistance, Junction to Ambient Optical Characteristics at 25°C Parameter Radiant Optical Power Radiant On-Axis Intensity Radiant On-Axis Intensity Temperature Coefficient Viewing Angle Peak wavelength ...

Page 3

Wavelength (nm) Figure 1. Relative Radiant Intensity vs. Wavelength 1000 100 T = 5˚ 0.0 0.5 1.0 1.5 .0 Forward Voltage, V Figure 3. Peak Forward Current ...

Page 4

Figure 7. Radiant Intensity vs. Angular Displacement For product information and a complete list of distributors, please go to our web site: Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and ...

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