HSDL-3020-021 Lite-On Electronics, HSDL-3020-021 Datasheet - Page 6
HSDL-3020-021
Manufacturer Part Number
HSDL-3020-021
Description
Infrared Transceivers IR Transceiver 4.0Mb/s
Manufacturer
Lite-On Electronics
Datasheet
1.HSDL-3020-021.pdf
(24 pages)
Specifications of HSDL-3020-021
Wavelength
875 nm
Continual Data Transmission
4 Mbit/s
Transmission Distance
50 cm
Radiant Intensity
10 mW/sr
Half Intensity Angle Degrees
30 deg to 60 deg
Pulse Width
4 us, 1.6 us
Maximum Rise Time
40 ns, 600 ns
Maximum Fall Time
40 ns, 600 ns
Led Supply Voltage
0 V to 6.5 V
Maximum Forward Current
190 mA
Operating Voltage
2.4 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Dimensions
10.4 mm x 2.95 mm x 2.5 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical and Optical Specifications
Specifications (Min. & Max. values) hold over the recommended operating conditions unless otherwise noted. Un-
specified test conditions may be anywhere in their operating range. All typical values (Typ.) are at 25°C with V
to 3.0 V and IOV
Parameter
Receiver
Viewing Angle
Peak Sensitivity Wavelength l
RxD_IrDA Output
Voltage
RxD_IrDA Pulse Width (SIR)
RxD_IrDA Pulse Width (MIR)
RxD_IrDA Pulse Width (Single) (FIR)
RxD_IrDA Pulse Width (Double) (FIR)
RxD_IrDA Rise & Fall Times tr, tf
Receiver Latency Time
Receiver Wake Up Time
Infrared (IR) Transmitter
IR Radiant Intensity (SIR Mode)
IR Radiant Intensity (MIR/FIR Mode)
IR Viewing Angle
IR Peak Wavelength
TxD_IrDA Logic Levels
TxD_IrDA Input Current
Wake Up Time
Maximum Optical Pulse Width
TxD Pulse Width (SIR)
TxD Pulse Width (MIR)
TxD Pulse Width (FIR)
TxD Rise & Fall Times (Optical)
6
[7]
CC
set to 1.8 V unless otherwise noted.
[5]
[6]
[4]
[4]
t
Logic High
Logic Low
High
Low
High
Low
RPW
[8]
P
(SIR)
[4]
[4]
Symbol
2q
V
V
1
t
t
t
t
t
I
I
2q
l
V
V
I
I
t
t
t
t
t
tr, tf
EH
EH
H
L
RPW
RPW
RPW
L
RW
TW
PW(Max
PW
PW
PW
OH
OL
P
IH
IL
1/2
1/2
(SIR)
(MIR)
(FIR)
(MIR)
(FIR)
(FIR)
)
Min.
30
875
IOV
0
100
80
200
40
4
10
30
IOV
0
CC
CC
– 0.5
- 0.5
Typ.
4
875
0.02
-0.02
180
25
1.6
217
125
Max.
nm
IOV
0.4
µs
500
175
290
ns
100
200
60
IOV
0.5
50
600
40
CC
CC
Units
°
V
V
q
ns
ns
ns
C
µs
µs
mW/sr
mW/sr
°
nm
V
V
µA
µA
ns
µs
µs
ns
ns
ns
ns
1/2
L
= 9 pF
≤ 15°, C
Conditions
I
µW/cm
q
q
q
EI = 9.0 µW/cm
EI = 10 µW/cm
IR_I
q
T
IR_I
q
T
V
0 ≤ V
t
115.2 kbit/s
t
1.152 Mbit/s
t
4.0 Mbit/s
t
115.2 kbit/s
t
4.0 Mbit/s
OH
L
PW
PW
PW
PW
PW
A
A
1/2
1/2
1/2
1/2
1/2
I
= 9 pF
= 25°C
= 25°C
≥ V
= -200 µA, EI ≤ 0.3
≤ 15°, C
≤ 15°, C
≤ 15°, C
≤ 15°, TxD_IR ≥ V
≤ 15°, TxD_IR ≥ V
(TxD_IR) = 1.6 µs at
(TxD_IR) = 217 ns at
(TxD_IR) = 125 ns at
(TxD_IR) = 1.6 µs at
(TxD_IR) = 125 ns at
LEDA
LEDA
I
IH
≤ V
2
= 70 mA,
= 120 mA,
IL
L
L
L
= 9 pF
= 9 pF
= 9 pF
2
2
CC
set
IH
IH
,
,