PT501 Sharp Microelectronics, PT501 Datasheet - Page 3

• Manufacturer Part Number: PT501
• Description: Photodetector Transistors PT +- 6 DEG 800nm 2.5-80mA
• Manufacturer: Sharp Microelectronics
• Type: Phototransistorr

Specifications of PT501

• Maximum Power Dissipation: 75 mW
• Maximum Dark Current: 100 nA
• Collector- Emitter Voltage Vceo Max: 45 V
• Fall Time: 10 us
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 25 C
• Rise Time: 10 us
• Package / Case: TO-18
• Voltage - Collector Emitter Breakdown (max): 45V
• Current - Collector (ic) (max): 10mA
• Current - Dark (id) (max): 100nA
• Wavelength: 800nm
• Viewing Angle: 12°
• Power - Max: 75mW
• Mounting Type: Through Hole
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig.4-b Collector Current vs. Irradiance
Fig.5-b Collector Current vs.
Fig. 7 Response Time vs. Load Resistance
200
100
20
15
10
14
12
10
50
20
10
5
0
8
6
4
2
0
5
2
1
0.1
0
0
Collector-emitter Voltage
V
I
T
C
T
CE
a
V
T
= 2mA
= 25˚C
a
0.2
CE
a
= 2V
= 25˚C
= 25˚C
= 5V
2
Load resistance R
2
Collector-emitter voltage V
0.5
Irradiance E
t
1
f
4
4
t
r
2
L
R
( k
e
BE
( mW/cm
500k
300k
200k
=
I
6
)
B
6
5
= 10
CE
5
9
8
6
4
3
2
1
7
2
P
)
10
( V )
C
A
A
( MAX. )
A
A
A
A
A
A
A
A
8
( PT510 )
8
( PT510 )
100k
50k
10
10
Fig.5-a Collector Current vs.
Fig. 6 Spectral Sensitivity
Fig. 8 Response Time vs. Base Resistance
100
0.5
0.2
0.1
26
24
22
20
18
16
14
12
10
80
60
40
20
20
10
8
6
4
2
0
0
5
2
1
400
10
0
Collector-emitter Voltage
V
I
T
C
CE
a
20
= 2mA
2
= 25˚C
5mW/cm
= 2V
600
Wavelength
4
50
Collector-emitter voltage V
E
P
2
C
e
= 10mW/cm
2.5mW/cm
Base resistance R
( MAX. )
6
800
100
7.5mW/cm
8
( nm )
200
1000
T
2
2
10
2
a
= 25˚C
500
BE
12
1200
( k
1000
PT501/PT510
CE
14
t
r
)
t
( V )
f
t
2000
s
t
d
16
( PT501 )
( PT510 )
T
a
= 25˚C
5000 10000
18
20