SFH 320 FA-4-Z OSRAM Opto Semiconductors Inc, SFH 320 FA-4-Z Datasheet - Page 3

• Manufacturer Part Number: SFH 320 FA-4-Z
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: IR Chipr

Specifications of SFH 320 FA-4-Z

• Maximum Power Dissipation: 165 mW
• Maximum Dark Current: 50 nA
• Fall Time: 8 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 8 us
• Package / Case: PLCC-2
• Package: 2PLCC
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Lens Shape Type: Flat
• Lens Dimensions: 2.4 mm
• Viewing Orientation: Top View
• Half Intensity Angle Degrees: 120 °
• Maximum Collector Current: 15 mA
• Maximum Rise Time: 8000 ns
• Peak Wavelength: 980 nm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A1836

Kennwerte (
Characteristics
Bezeichnung
Parameter
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche (∅ 220 µm)
Radiant sensitive area
Abmessung der Chipfläche
Dimensions of chip area
Halbwinkel
Half angle
Kapazität,
Capacitance
Dunkelstrom
Dark current
V
2007-05-10
CE
= 10% von
= 10% of
= 20 V,
V
S
CE
E
max
T
S
A
= 0
max
= 0 V,
= 25 ° C, λ = 950 nm)
f
= 1 MHz,
E
= 0
Symbol
Symbol
λ
λ
A
L
L
ϕ
C
I
3
CEO
S max
CE
×
×
B
W
SFH 320
980
450 … 1150
0.038
0.45 × 0.45
± 60
5.0
1 (≤ 50)
Value
Wert
SFH 320, SFH 320 FA
SFH 320 FA
980
750 … 1120
0.038
0.45 × 0.45
± 60
5.0
1 (≤ 50)
Einheit
Unit
nm
nm
mm
mm × m
m
Grad
deg.
pF
nA
2