SFH 320 FA-4-Z OSRAM Opto Semiconductors Inc, SFH 320 FA-4-Z Datasheet - Page 5

• Manufacturer Part Number: SFH 320 FA-4-Z
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: IR Chipr

Specifications of SFH 320 FA-4-Z

• Maximum Power Dissipation: 165 mW
• Maximum Dark Current: 50 nA
• Fall Time: 8 us
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 8 us
• Package / Case: PLCC-2
• Package: 2PLCC
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Lens Shape Type: Flat
• Lens Dimensions: 2.4 mm
• Viewing Orientation: Top View
• Half Intensity Angle Degrees: 120 °
• Maximum Collector Current: 15 mA
• Maximum Rise Time: 8000 ns
• Peak Wavelength: 980 nm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A1836

Relative Spectral Sensitivity,
SFH 320
Total Power Dissipation
P
Dark Current
I
2007-05-10
CEO
tot
Ι
S
P
CEO
rel
tot
=
10
100
=
10
10
10
10
nA
%
mW
200
160
120
80
70
60
50
40
30
20
10
f
80
40
-1
0
400
0
3
2
1
0
-25
f
(
0
T
(
T
A
S
500 600 700 800 900
)
A
rel
),
0
20
=
V
CE
f
25
(λ)
40
= 5 V, E = 0
50
60
75
OHF00207
80 ˚C 100
λ
T
OHF01530
nm
T
A
OHF00871
A
˚C
1100
100
Relative Spectral Sensitivity,
SFH 320 FA
Photocurrent
I
Capacitance
C
S
PCE
CE
rel
Ι
C
PCE
100
CE
80
60
40
20
=
%
=
10
10
0
mA
400
10
5.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
pF
f
-1
-2
f
0
10
0
0
(
(
V
-2
V
500 600 700 800 900
CE
CE
5
),
),
10
S
f
10
E
rel
-1
= 1 MHz,
e
=
= Parameter
15
5
10
f
(λ)
0
20
0.25
0.5
0.1
25
1
10
E
mW
cm
mW
cm
mW
cm
mW
cm
1
OHF00468
= 0
OHF01529
V
OHF01528
30
V
2
2
2
2
λ
nm
CE
V
CE
V
10
35
1100
2
Photocurrent
I
Dark Current
I
Photocurrent
I
PCE
CEO
PCE
Ι
Ι
PCE
PCE
Ι
Ι
/
PCE
SFH 320, SFH 320 FA
=
CEO
I
25
=
10
PCE25
10
10
10
10
µ
10
10
10
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
nA
10
f
A
-1
f
0
3
2
1
0
10
-1
-2
-3
-25
1
0
(E
(
0
V
-3
e
CE
o
),
=
5
),
0
V
f
CE
E
10
(
10
T
= 0
-2
A
25
= 5 V
),
15
V
CE
20
50
mW/cm
= 5 V
25
2
75
4
3
2
OHF01924
OHF01524
E
T
OHF01527
V
30
A
e
CE
C
V
10
100
35
0