BPX 81-4 OSRAM Opto Semiconductors Inc, BPX 81-4 Datasheet - Page 2

• Manufacturer Part Number: BPX 81-4
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 81-4

• Maximum Power Dissipation: 90 mW
• Maximum Dark Current: 50 nA
• Fall Time: 8 us
• Maximum Operating Temperature: + 80 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 8 us
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Transparent
• Collector-emitter Voltage: 35V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.15V
• Dark Current (max): 50nA
• Light Current: 2.9mA
• Power Dissipation: 90mW
• Peak Wavelength: 850nm
• Half-intensity Angle: 36deg
• Operating Temp Range: -40C to 80C
• Operating Temperature Classification: Commercial
• Mounting: Through Hole
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0043S004

Grenzwerte
Maximum Ratings
Bezeichnung
Parameter
Betriebs- und Lagertemperatur
Operating and storage temperature range
Kollektor-Emitterspannung
Collector-emitter voltage
Kollektorstrom
Collector current
Kollektorspitzenstrom, τ < 10 μs
Collector surge current
Verlustleistung,
Total power dissipation
Wärmewiderstand
Thermal resistance
2007-03-30
T
A
= 25 °C
Symbol
Symbol
T
V
I
I
P
R
C
CS
2
op
CE
tot
thJA
;
T
stg
Wert
Value
– 40 … + 80
35
50
200
90
750
Einheit
Unit
°C
V
mA
mA
mW
K/W
BPX 81