BPX 81-4 OSRAM Opto Semiconductors Inc, BPX 81-4 Datasheet - Page 6

• Manufacturer Part Number: BPX 81-4
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 81-4

• Maximum Power Dissipation: 90 mW
• Maximum Dark Current: 50 nA
• Fall Time: 8 us
• Maximum Operating Temperature: + 80 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 8 us
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Transparent
• Collector-emitter Voltage: 35V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.15V
• Dark Current (max): 50nA
• Light Current: 2.9mA
• Power Dissipation: 90mW
• Peak Wavelength: 850nm
• Half-intensity Angle: 36deg
• Operating Temp Range: -40C to 80C
• Operating Temperature Classification: Commercial
• Mounting: Through Hole
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0043S004

Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
2007-03-30
1)
Detaching area for tools, flash not true to size.
Approx. weight 0.03 g
0.4
Collector (BPX 81)
Cathode (LD 261)
0.5 (0.020)
0.4 (0.016)
A
1.4 (0.055)
1.0 (0.039)
0.7 (0.028)
0.6 (0.024)
2.1 (0.083)
2.4 (0.094)
A
Radiant sensitive area
(0.4 x 0.4)
6
2.1 (0.083)
1.5 (0.059)
Chip
position
0
2.54 (0.100) spacing
...
5˚
GEOY6021
BPX 81