BPX 81-4 OSRAM Opto Semiconductors Inc, BPX 81-4 Datasheet - Page 3

• Manufacturer Part Number: BPX 81-4
• Description: Photodetector Transistors PHOTOTRANSISTOR
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 81-4

• Maximum Power Dissipation: 90 mW
• Maximum Dark Current: 50 nA
• Fall Time: 8 us
• Maximum Operating Temperature: + 80 C
• Minimum Operating Temperature: - 40 C
• Rise Time: 8 us
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Transparent
• Collector-emitter Voltage: 35V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.15V
• Dark Current (max): 50nA
• Light Current: 2.9mA
• Power Dissipation: 90mW
• Peak Wavelength: 850nm
• Half-intensity Angle: 36deg
• Operating Temp Range: -40C to 80C
• Operating Temperature Classification: Commercial
• Mounting: Through Hole
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0043S004

Kennwerte (
Characteristics
Bezeichnung
Parameter
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity
Spektraler Bereich der Fotoempfindlichkeit
S
Spectral range of sensitivity
S
Bestrahlungsempfindliche Fläche
Radiant sensitive area
Abmessung der Chipfläche
Dimensions of chip area
Halbwinkel
Half angle
Kapazität
Capacitance
V
Dunkelstrom
Dark current
V
2007-03-30
CE
CE
= 10% von
= 10% of
= 0 V,
= 20 V,
f
S
= 1 MHz,
E
max
T
S
= 0
A
max
= 25 °C, λ = 950 nm)
E
= 0
Symbol
Symbol
λ
λ
A
L
L
ϕ
C
I
CEO
3
S max
CE
×
×
B
W
Wert
Value
850
450 … 1100
0.11
0.5 × 0.5
± 18
7.5
1 (≤ 50)
Einheit
Unit
nm
nm
mm
mm × mm
Grad
deg.
pF
nA
2
BPX 81