SUD50N03-16P-E3 Vishay, SUD50N03-16P-E3 Datasheet - Page 2

• Manufacturer Part Number: SUD50N03-16P-E3
• Description: MOSFET N-CH D-S 30V TO252
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50N03-16P-E3

• Input Capacitance (ciss) @ Vds: 1150pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Power - Max: 40.8W
• Mounting Type: *
• Package / Case: *
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 37 A
• Power Dissipation: 6500 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

SUD50N03-16P
Vishay Siliconix
Notes
a.
b.
c.
www.vishay.com
2
SPECIFICATIONS (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Drain Source On State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristic (T
Pulsed Current
Diode Forward Voltage
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Guaranteed by design, not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Independent of operating temperature.
c
c
60
50
40
30
20
10
0
a
0
Parameter
c
c
c
c
c
b
b
V
2
DS
V
b
Output Characteristics
GS
− Drain-to-Source Voltage (V)
= 10 thru 5 V
b
J
4
= 25_C UNLESS OTHERWISE NOTED)
6
Symbol
V
V
r
r
(BR)DSS
I
DS(on)
DS(on)
t
t
I
C
GS(th)
I
I
C
V
D(on)
C
Q
Q
d(off)
GSS
d(on)
I
DSS
DSS
g
Q
R
SM
t
oss
t
t
SD
iss
rss
rr
fs
gs
gd
r
f
g
g
8
4 V
3 V
C
New Product
10
V
I
V
V
V
V
D
= 25_C)
GS
DS
DS
DS
GS
^ 50 A, V
= 0 V, V
I
= 30 V, V
= 15 V, V
V
= 10 V, I
F
V
V
V
V
V
V
V
DS
V
V
15 V, V
= 40 A, di/dt = 100 A/ms
DS
I
Test Condition
GS
DD
DD
DS
DS
GS
F
GS
DS
= 0 V, V
= 20 A, V
= V
= 15 V, R
= 15 V, R
= 0 V, I
= 30 V, V
= 5 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
DS
GEN
D
GS
GS
GS
GS
= 25 V, f = 1 MHz
= 20 A, T
, I
= 10 V, R
= 0 V, T
GS
= 4.5 V, I
D
D
GS
GS
D
4.5 V, I
= 250 mA
D
L
L
GS
D
= 250 mA
= "20 V
= 20 A
= 0.3 W
= 0.3 W
= 15 A
= 10 A
= 10 V
= 0 V
= 0 V
J
J
= 125_C
g
g
= 125_C
D
D
= 2.5 W
60
50
40
30
20
10
= 50 A
0
50 A
0
1
V
GS
Transfer Characteristics
− Gate-to-Source Voltage (V)
Min
1.0
2.7
30
40
10
2
25_C
T
C
= 125_C
3
0.0128
Typ
0.019
1150
215
8.5
2.5
5.5
1.0
70
20
25
12
25
5
7
S-40466—Rev. A, 15-Mar-04
a
Document Number: 72634
−55_C
4
"100
Max
0.016
0.025
0.024
8.25
3.0
1.5
50
13
15
30
40
20
40
70
1
5
Unit
nC
nC
nA
mA
mA
pF
p
ns
ns
ns
W
W
W
V
V
A
S
A
V
6