SUD50N03-16P-E3 Vishay, SUD50N03-16P-E3 Datasheet - Page 4
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SUD50N03-16P-E3
Manufacturer Part Number
SUD50N03-16P-E3
Description
MOSFET N-CH D-S 30V TO252
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SUD50N03-16P-E3.pdf
(5 pages)
Specifications of SUD50N03-16P-E3
Input Capacitance (ciss) @ Vds
1150pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Power - Max
40.8W
Mounting Type
*
Package / Case
*
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
37 A
Power Dissipation
6500 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
SUD50N03-16P
Vishay Siliconix
www.vishay.com
4
THERMAL RATINGS
20
15
10
5
0
0.01
0.01
0
0.1
0.1
2
1
2
1
10
10
−4
−4
25
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Maximum Drain Current vs.
Single Pulse
T
A
0.05
Ambiemt Temperature
50
− Ambient Temperature (_C)
0.02
10
10
75
−3
−3
100
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Thermal Transient Impedance, Junction-to-Ambient
125
10
−2
150
10
−2
New Product
175
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
−1
10
−1
0.01
100
1
0.1
10
1
by r
0.1
Limited
DS(on)
1
V
DS
10
Single Pulse
Safe Operating Area
T
− Drain-to-Source Voltage (V)
A
1
= 25_C
10
100
S-40466—Rev. A, 15-Mar-04
Document Number: 72634
10
10 ms
100 ms
1 ms
10 ms
100 ms
1 s
10 s
dc, 100 s
1000
100
100