SUD50N03-16P-E3 Vishay, SUD50N03-16P-E3 Datasheet - Page 4

• Manufacturer Part Number: SUD50N03-16P-E3
• Description: MOSFET N-CH D-S 30V TO252
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50N03-16P-E3

• Input Capacitance (ciss) @ Vds: 1150pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Power - Max: 40.8W
• Mounting Type: *
• Package / Case: *
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 37 A
• Power Dissipation: 6500 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

SUD50N03-16P
Vishay Siliconix
www.vishay.com
4
THERMAL RATINGS
20
15
10
5
0
0.01
0.01
0
0.1
0.1
2
1
2
1
10
10
−4
−4
25
Duty Cycle = 0.5
0.2
0.1
0.02
0.05
Duty Cycle = 0.5
0.2
0.1
Single Pulse
Maximum Drain Current vs.
Single Pulse
T
A
0.05
Ambiemt Temperature
50
− Ambient Temperature (_C)
0.02
10
10
75
−3
−3
100
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Thermal Transient Impedance, Junction-to-Ambient
125
10
−2
150
10
−2
New Product
175
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
−1
10
−1
0.01
100
1
0.1
10
1
by r
0.1
Limited
DS(on)
1
V
DS
10
Single Pulse
Safe Operating Area
T
− Drain-to-Source Voltage (V)
A
1
= 25_C
10
100
S-40466—Rev. A, 15-Mar-04
Document Number: 72634
10
10 ms
100 ms
1 ms
10 ms
100 ms
1 s
10 s
dc, 100 s
1000
100
100