SUD50N03-16P-E3 Vishay, SUD50N03-16P-E3 Datasheet - Page 3
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SUD50N03-16P-E3
Manufacturer Part Number
SUD50N03-16P-E3
Description
MOSFET N-CH D-S 30V TO252
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SUD50N03-16P-E3.pdf
(5 pages)
Specifications of SUD50N03-16P-E3
Input Capacitance (ciss) @ Vds
1150pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Power - Max
40.8W
Mounting Type
*
Package / Case
*
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.016 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
37 A
Power Dissipation
6500 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Document Number: 72634
S-40466—Rev. A, 15-Mar-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1500
1200
900
600
300
2.1
1.8
1.5
1.2
0.9
0.6
60
50
40
30
20
10
0
0
−50 −25
0
0
On-Resistance vs. Junction Temperature
V
I
D
GS
C
= 15 A
rss
5
5
= 10 V
V
T
0
DS
J
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
I
Transconductance
10
D
10
25
− Drain Current (A)
Capacitance
C
iss
50
15
15
C
oss
75
100
20
20
T
C
125
= −55_C
125_C
25
25
25_C
150
175
New Product
30
30
0.05
0.04
0.03
0.02
0.01
0.00
100
10
10
1
8
6
4
2
0
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
V
= 50 A
GS
T
10
On-Resistance vs. Drain Current
3
J
= 15 V
0.3
V
= 4.5 V
= 150_C
SD
Q
g
− Source-to-Drain Voltage (V)
I
D
− Total Gate Charge (nC)
20
6
− Drain Current (A)
Gate Charge
0.6
SUD50N03-16P
Vishay Siliconix
30
9
0.9
40
12
T
V
J
GS
= 25_C
= 10 V
www.vishay.com
1.2
50
15
60
18
1.5
3