SUD50N03-16P-E3 Vishay, SUD50N03-16P-E3 Datasheet - Page 3

• Manufacturer Part Number: SUD50N03-16P-E3
• Description: MOSFET N-CH D-S 30V TO252
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SUD50N03-16P-E3

• Input Capacitance (ciss) @ Vds: 1150pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Power - Max: 40.8W
• Mounting Type: *
• Package / Case: *
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.016 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 37 A
• Power Dissipation: 6500 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Continuous Drain (id) @ 25° C: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Document Number: 72634
S-40466—Rev. A, 15-Mar-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1500
1200
900
600
300
2.1
1.8
1.5
1.2
0.9
0.6
60
50
40
30
20
10
0
0
−50 −25
0
0
On-Resistance vs. Junction Temperature
V
I
D
GS
C
= 15 A
rss
5
5
= 10 V
V
T
0
DS
J
− Junction Temperature (_C)
− Drain-to-Source Voltage (V)
I
Transconductance
10
D
10
25
− Drain Current (A)
Capacitance
C
iss
50
15
15
C
oss
75
100
20
20
T
C
125
= −55_C
125_C
25
25
25_C
150
175
New Product
30
30
0.05
0.04
0.03
0.02
0.01
0.00
100
10
10
1
8
6
4
2
0
0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
V
= 50 A
GS
T
10
On-Resistance vs. Drain Current
3
J
= 15 V
0.3
V
= 4.5 V
= 150_C
SD
Q
g
− Source-to-Drain Voltage (V)
I
D
− Total Gate Charge (nC)
20
6
− Drain Current (A)
Gate Charge
0.6
SUD50N03-16P
Vishay Siliconix
30
9
0.9
40
12
T
V
J
GS
= 25_C
= 10 V
www.vishay.com
1.2
50
15
60
18
1.5
3