SI6413DQ-T1-E3 Vishay, SI6413DQ-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI6413DQ-T1-E3
• Description: MOSFET DUAL P-CH 30V 1.8A 8TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6413DQ-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 8.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.2A
• Vgs(th) (max) @ Id: 800mV @ 400µA
• Gate Charge (qg) @ Vgs: 105nC @ 5V
• Power - Max: 1.05W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72084
S-80682-Rev. B, 31-Mar-08
0.030
0.024
0.018
0.012
0.006
0.000
0.1
30
10
1
5
4
3
2
1
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 8.8 A
0.2
On-Resistance vs. Drain Current
= 10 V
14
6
V
T
SD
J
Q
= 150 °C
- Source-to-Drain Voltage (V)
g
0.4
I
D
- Total Gate Charge (nC)
- Drain Current (A)
Gate Charge
28
12
0.6
42
18
0.8
T
J
V
V
V
= 25 °C
GS
GS
GS
= 1.8 V
= 2.5 V
= 4.5 V
56
24
1.0
1.2
70
30
8000
6400
4800
3200
1600
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
C
D
- 25
GS
rss
= 8.8 A
1
= 4.5 V
4
T
0
J
V
V
C
- Junction Temperature (°C)
GS
DS
2
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
8
C
3
iss
I
D
50
= 8.8 A
Vishay Siliconix
4
12
75
Si6413DQ
100
5
www.vishay.com
16
125
6
150
20
7
3