SI6413DQ-T1-E3 Vishay, SI6413DQ-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI6413DQ-T1-E3
• Description: MOSFET DUAL P-CH 30V 1.8A 8TSSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI6413DQ-T1-E3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 8.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7.2A
• Vgs(th) (max) @ Id: 800mV @ 400µA
• Gate Charge (qg) @ Vgs: 105nC @ 5V
• Power - Max: 1.05W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72084.
Document Number: 72084
S-80682-Rev. B, 31-Mar-08
0.01
0.1
2
1
10
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square
10
-2
Wave Pulse Duration (s)
10
-1
1
Vishay Siliconix
Si6413DQ
www.vishay.com
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