VUO36-18NO8 IXYS, VUO36-18NO8 Datasheet - Page 2
![RECT BRIDGE 3PH 35A 1800V FO-B-B](/photos/31/41/314150/5pin_fo-b-b_sml.jpg)
VUO36-18NO8
Manufacturer Part Number
VUO36-18NO8
Description
RECT BRIDGE 3PH 35A 1800V FO-B-B
Manufacturer
IXYS
Datasheet
1.VUO36-08NO8.pdf
(2 pages)
Specifications of VUO36-18NO8
Voltage - Peak Reverse (max)
1800V
Current - Dc Forward (if)
35A
Diode Type
Three Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
QC Terminal
Package / Case
FO-B-B
Phase Type
Three Phase
Number Of Elements
1
Peak Rep Rev Volt
1.8kV
Peak Non-repetitive Surge Current (max)
600A
Avg. Forward Curr (max)
35A
Rev Curr
300uA
Forward Voltage
1.7V
Operating Temp Range
-40C to 150C
Pin Count
5
Mounting
Screw
Operating Temperature Classification
Automotive
Vrrm, (v)
1800
Vrsm, (v)
1900
Idavm, (a)
35
@ Th, (°c)
-
@ Tc, (°c)
62
Ifsm, 10 Ms, Tvj = 45°c, (a)
550
Vt0, (v)
0.80
Rt, (mohms)
7.4
Tvjm, (°c)
150
Rthjc, Per Chip, (k/w)
7.50
Rthjh, Per Chip, (k/w)
8.40
Package Style
FO-B-B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VUO36-18NO8
Manufacturer:
FUJI
Quantity:
1 000
Part Number:
VUO36-18NO8
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Part Number:
VUO36-18NO8
Quantity:
83
IXYS reserves the right to change limits, test conditions and dimensions.
© IXYS All rights reserved
P
[W]
[A]
[K/W]
I
F
tot
Z
th
30
25
20
15
10
80
60
40
20
0.001
5
0
0
9
6
3
0
0.5
0
Fig. 1 Forward current versus
Fig. 4 Power dissipation vs. direct output current and ambient temperature
Fig. 6
T
T
VJ
VJ
10
voltage drop per diode
= 150°C
= 25°C
Transient thermal impedance per diode
I
0.01
dAVM
V
20
1.0
F
[V]
[A]
max.
typ.
30
0.1
0
1.5
t [s]
I
[A]
FSM
Fig. 2 Surge overload current per diode
600
500
400
300
200
100
50
1
0.001
0
I
FSM
T
A
: Crest value. t: duration
[°C]
100
0.01
10
Z
thJK
t [s]
R
0.15
1
2
4
8
15
T
T
thKA
VJ
VJ
Z
= 45°C
= 150°C
K/W
thJC
150
0.1
50 Hz
80% V
100
RRM
1
I
[A
[A]
dAV
I
2
2
t
s]
10
10
10
40
30
20
10
Constants for Z
Constants for Z
0
4
3
2
1
0
Fig. 3 I
Fig. 5 Maximum forward current
1
2
3
4
1
2
3
4
5
i
i
T
VJ
= 45°C
50
R
R
per diode
at case temperature
2
t versus time (1-10 ms)
thi
thi
0.183
0.528
0.183
0.528
2
1.89
1.89
4.9
4.9
0.9
(K/W)
(K/W)
T
thJC
thJK
t [ms]
C
T
100
3
VJ
calculation:
calculation:
[°C]
= 150°C
VUO 36
4
5 6 7 8 9
150
0.032
0.085
0.032
0.085
t
t
i
5.9
8.3
5.9
8.3
i
28
(s)
(s)
20100920b
2 - 2
200
10