ADUC843BSZ62-3 Analog Devices Inc, ADUC843BSZ62-3 Datasheet - Page 7
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ADUC843BSZ62-3
Manufacturer Part Number
ADUC843BSZ62-3
Description
Microconverter, ADUC842 Without DACs
Manufacturer
Analog Devices Inc
Series
MicroConverter® ADuC8xxr
Datasheet
1.EVAL-ADUC842QS.pdf
(88 pages)
Specifications of ADUC843BSZ62-3
Core Processor
8052
Core Size
8-Bit
Speed
8.38MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
DMA, PSM, PWM, Temp Sensor, WDT
Number Of I /o
32
Program Memory Size
62KB (62K x 8)
Program Memory Type
FLASH
Ram Size
2.25K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
52-MQFP, 52-PQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ADUC843BSZ62-3
Manufacturer:
Analog Devices Inc
Quantity:
10 000
Part Number:
ADUC843BSZ62-3
Manufacturer:
ADI/亚德诺
Quantity:
20 000
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Temperature Range –40°C to +85°C.
ADC linearity is guaranteed during normal MicroConverter core operation.
ADC LSB size = V
These numbers are not production tested but are supported by design and/or characterization data on production release.
Offset and gain error and offset and gain error match are measured after factory calibration.
Based on external ADC system components, the user may need to execute a system calibration to remove additional external channel errors to achieve these
specifications.
SNR calculation includes distortion and noise components.
Channel-to-channel crosstalk is measured on adjacent channels.
The temperature monitor gives a measure of the die temperature directly; air temperature can be inferred from this result.
unbuffered mode tested with OP270 external buffer, which has a low input leakage current.
chosen for the C
with junction temperature as shown in Figure 38 in the Flash/EE Memory Reliability section.
DAC linearity is calculated using:
DAC differential nonlinearity specified on 0 V to V
DAC specification for output impedance in the unbuffered case depends on DAC code.
DAC specifications for I
Measured with C
When using an external reference device, the internal band gap reference input can be bypassed by setting the ADCCON1.6 bit.
Flash/EE memory reliability characteristics apply to both the Flash/EE program memory and the Flash/EE data memory.
Endurance is qualified to 100,000 cycles as per JEDEC Std. 22 method A117 and measured at –40°C, +25°C, and +85°C. Typical endurance at 25°C is 700,000 cycles.
Retention lifetime equivalent at junction temperature (T
Power supply current consumption is measured in normal, idle, and power-down modes under the following conditions:
DV
Power supply currents are production tested at 5.25 V and 3.3 V for a 5 V and 3 V part, respectively.
DD
Reduced code range of 100 to 4095, 0 V to V
Reduced code range of 100 to 3945, 0 V to V
DAC output load = 10 kΩ and 100 pF.
Normal Mode:
Idle Mode:
Power-Down Mode:
power supply current increases typically by 3 mA (3 V operation) and 10 mA (5 V operation) during a Flash/EE memory program or erase cycle.
REF
REF
REF
/2
pin.
pin decoupled with 0.47 µF capacitor to ground. Power-up time for the internal reference is determined by the value of the decoupling capacitor
12
, i.e., for internal V
SINK
, voltage output settling time, and digital-to-analog glitch energy depend on external buffer implementation in unbuffered mode. DAC in
software loop.
Reset = 0.4 V, digital I/O pins = open circuit, Core Clk changed via CD bits in PLLCON (ADuC842/ADuC843), PCON.0 = 1, core execution
suspended in idle mode.
Reset = 0.4 V, all Port 0 pins = 0.4 V, All other digital I/O and Port 1 pins are open circuit, Core Clk changed via CD bits in PLLCON
(ADuC842/ADuC843), PCON.0 = 1, core execution suspended in power-down mode, OSC turned on or off via OSC_PD bit (PLLCON.7) in
PLLCON SFR (ADuC842/ADuC843).
Reset = 0.4 V, digital I/O pins = open circuit, Core Clk changed via CD bits in PLLCON (ADuC842/ADuC843), core executing internal
REF
= 2.5 V, 1 LSB = 610 µV, and for external V
REF
DD
REF
range.
range.
and 0 V to V
J
) = 55°C as per JEDEC Std. 22 method A117. Retention lifetime based on an activation energy of 0.6 eV derates
DD
ranges.
Rev. 0 | Page 7 of 88
REF
= 1 V, 1 LSB = 244 µV.
ADuC841/ADuC842/ADuC843