AM29F080B-90EI Spansion Inc., AM29F080B-90EI Datasheet - Page 38
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AM29F080B-90EI
Manufacturer Part Number
AM29F080B-90EI
Description
Flash Memory IC
Manufacturer
Spansion Inc.
Datasheets
1.AM29F080B-90EI.pdf
(39 pages)
2.AM29F080B-90EI.pdf
(37 pages)
3.AM29F080B-90EI.pdf
(37 pages)
4.AM29F080B-90EI.pdf
(38 pages)
Specifications of AM29F080B-90EI
Memory Size
8Mbit
Memory Configuration
1M X 8
Ic Interface Type
Parallel
Access Time
80ns
Memory Case Style
TSOP
No. Of Pins
40
Mounting Type
Surface Mount
Peak Reflow Compatible (260 C)
No
Supply Voltage Max
5.5V
Rohs Compliant
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AM29F080B-90EI
Manufacturer:
AMD
Quantity:
4 596
Company:
Part Number:
AM29F080B-90EI
Manufacturer:
AMD
Quantity:
4 596
REVISION SUMMARY
Revision A (July 1997)
Initial release.
Revision B (January 1998)
Global
Formatted for consistency with other 5.0 volt-only
data sheets.
Figure 9, Read Operation Timings
Corrected RESET# waveform so that it is high for the
duration of the read cycle.
Figure 11, Chip/Sector Erase Operation Timings
Corrected data unlock cycle in diagram to 55h.
Figure 17, Alternate CE# Controlled Program
Operation Timings
Corrected command for sector erase to 30h, chip erase
to 10h.
Revision C (January 1998)
Standby Mode
Removed sentence in first paragraph referring to
RESET# pulse.
Sector Group Protection/Unprotection, Temporary
Sector Group Unprotect
Changed references from “sector” to “sector group”.
Corrected text to indicate sector groups are composed
of two adjacent sectors.
Revision D (May 1998)
Distinctive Characteristics
Changed minimum 100K write/erase cycles guaran-
teed to 1,000,000.
DC Characteristics, CMOS Compatible
For I
and RESET# are now ±0.5 V.
AC Characteristics
Erase/Program Operations; Erase and Program Oper-
ations Alternate CE# Controlled Writes: Corrected the
notes reference for t
eters are 100% tested. Corrected the note reference for
t
Temporary Sector Unprotect Table
Added note reference for t
100% tested.
Command Definitions
Corrected the shift in the table header.
36
VCS
. This parameter is not 100% tested.
CC3
and I
CC4
, the voltage tolerances given for CE#
WHWH1
VIDR
and t
. This parameter is not
WHWH2
. These param-
D A T A S H E E T
Am29F080B
Erase and Programming Performance
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Revision E (January 1999)
Global
Updated for CS39S process technology.
Distinctive Characteristics
Added:
■ 20-year data retention at 125°C
DC Characteristics—CMOS Compatible
Added note “For CMOS mode only, I
max at extended temperatures (> +85°C)
DC Characteristics—TTL/NMOS Compatible and
CMOS Compatible
I
specifications are tested with V
I
Revision E+1 (March 23, 1999)
Operating Ranges
The temperature ranges are now specified as ambient.
Revision E+2 (April 9, 1999)
Ordering Information, Operating Ranges
Added the extended temperature range.
Revision F (November 15, 1999)
AC Characteristics—Figure 11. Program
Operations Timing and Figure 12. Chip/Sector
Erase Operations
Deleted t
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision F+1 (May 18, 2000)
DC Characteristics
TTL/NMOS Compatible: The ICC2 specifications are
now identical to those for CMOS compatible.
Revision G (December 4, 2000)
Added table of contents.
Ordering Information
Deleted burn-in option.
CC1
CC3
— Reliable operation for the life of the system
, I
, I
CC4
CC2
GHWL
: Deleted V
, I
CC3
and changed OE# waveform to start at
, I
CC4
CC
: Added Note 2 “Maximum I
= V
CC
21503G5 November 1, 2006
Max.
CC
= V
CC3
CCmax
= I
”.
CC4
”.
= 20 µA
CC