CY62146ELL-45ZSXIT Cypress Semiconductor Corp, CY62146ELL-45ZSXIT Datasheet - Page 5

• Manufacturer Part Number: CY62146ELL-45ZSXIT
• Description: CY62146ELL-45ZSXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62146ELL-45ZSXIT

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 4M (256K x 16)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Data Retention Characteristics
Over the Operating Range
Notes
Document Number: 001-07970 Rev. *G
V
I
t
t
9. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
10. Chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the I
11. Tested initially and after any design or process changes that may affect these parameters.
12. Full device operation requires linear V
CCDR
CDR
R
Parameter
DR
[12]
[11]
[10]
V
CE
CC
V
Data retention current
Chip deselect to data
retention time
Operation recovery time
CC
Parameters
OUTPUT
for data retention
INCLUDING
R
V
V
R1
R2
SCOPE
JIG AND
TH
TH
CC
Description
30 pF
R1
CC
ramp from V
R2
V
Figure 2. AC Test Loads and Waveforms
V
V
t
CC(min)
CDR
DR
CC
IN
Figure 3. Data Retention Waveform
to V
Rise Time = 1 V/ns
> V
= 2 V, CE > V
CC(min)
CC
– 0.2 V or V
> 100 s or stable at V
GND
V
CC
Equivalent to:
Conditions
DATA RETENTION MODE
CC
5.0 V
1800
1.77
990
639
10%
– 0.2 V,
IN
OUTPUT
< 0.2 V
V
DR
> 2.0 V
ALL INPUT PULSES
CC(min)
90%
THÉ VENIN EQUIVALENT
SB2
> 100 s.
/ I
CCDR
spec. Other inputs are left floating.
R
TH
Min
45
CC
90%
2
–
0
= V
10%
V
Fall Time = 1 V/ns
CC(typ)
CC(min)
V
t
R
TH
CY62146E MoBL
Typ
, T
–
1
–
–
A
[9]
= 25 °C.
Unit



V
Max
–
7
–
–
Page 5 of 14
Unit
A
ns
ns
V

[+] Feedback