CY62157EV30LL-45BVI Cypress Semiconductor Corp, CY62157EV30LL-45BVI Datasheet - Page 6
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CY62157EV30LL-45BVI
Manufacturer Part Number
CY62157EV30LL-45BVI
Description
CY62157EV30LL-45BVI
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY62157EV30LL-45ZSXI.pdf
(17 pages)
Specifications of CY62157EV30LL-45BVI
Format - Memory
RAM
Memory Type
SRAM
Memory Size
8M (512K x 16)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.2 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-VFBGA
Density
8Mb
Access Time (max)
45ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
2.5/3.3V
Address Bus
19b
Package Type
VFBGA
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
25mA
Operating Supply Voltage (min)
2.2V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
48
Word Size
16b
Number Of Words
512K
Lead Free Status / RoHS Status
Contains lead / RoHS compliant by exemption
Lead Free Status / RoHS Status
Contains lead / RoHS compliant by exemption
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY62157EV30LL-45BVI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Company:
Part Number:
CY62157EV30LL-45BVIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Data Retention Characteristics
Over the Operating Range
Data Retention Waveform
Document #: 38-05445 Rev. *H
Parameter
V
I
t
t
Notes
CCDR
CDR
R
10. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
11. Tested initially and after any design or process changes that may affect these parameters.
12. Full device operation requires linear V
13. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.
DR
[12]
BHE.BLE
[11]
CE
V
CE
1
CC
or
or
2
V
Data retention current
Chip deselect to data
retention time
Operation recovery time
CC
for data retention
Description
CC
ramp from V
V
CE
V
CC
t
CC(min)
2
CDR
Figure 5. Data Retention Waveform
= 1.5V, CE
< 0.2V , V
DR
to V
CC(min)
IN
1
> V
> V
> 100 s or stable at V
CC
CC
DATA RETENTION MODE
– 0.2V or V
– 0.2V,
Conditions
V
DR
> 1.5V
IN
CC(min)
< 0.2V
> 100 s.
[13]
Industrial/
Auto-A
Auto-E
CC
V
CY62157EV30 MoBL
= V
CC(min)
t
CC(typ)
R
Min
t
1.5
RC
0
, T
A
= 25 °C.
Typ
2
[10]
Max Unit
30
5
Page 6 of 17
A
ns
ns
V
®
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