CY62157EV30LL-45BVXIT Cypress Semiconductor Corp, CY62157EV30LL-45BVXIT Datasheet - Page 5

• Manufacturer Part Number: CY62157EV30LL-45BVXIT
• Description: CY62157EV30LL-45BVXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62157EV30LL-45BVXIT

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 8M (512K x 16)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.2 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05445 Rev. *H
C
C
Parameter
Parameter
IN
OUT


JC
JA
Parameters
OUTPUT
Thermal resistance
(Junction to Ambient)
Thermal resistance
(Junction to Case)
Input capacitance
Output capacitance
INCLUDING
R
V
R1
R2
V
SCOPE
TH
TH
JIG AND
Description
Description
CC
30 pF
R1
T
V
Still air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
A
CC
R2
= 25°C, f = 1 MHz,
Figure 4. AC Test Loads and Waveforms
= V
CC(typ)
Rise Time = 1 V/ns
Test Conditions
16667
15385
8000
2.5V
1.20
Test Conditions
GND
V
CC
Equivalent to:
10%
OUTPUT
ALL INPUT PULSES
90%
THÉ VENIN EQUIVALENT
BGA
8.86
72
1554
3.0V
1103
1.75
645
R
TH
TSOP I
74.88
90%
8.6
10%
Max
CY62157EV30 MoBL
Fall Time = 1 V/ns
10
10
V
TH
TSOP II
76.88
13.52
Unit



V
Unit
pF
pF
C/W
C/W
Unit
Page 5 of 17
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