CY7C109D-10ZXIT Cypress Semiconductor Corp, CY7C109D-10ZXIT Datasheet - Page 6

• Manufacturer Part Number: CY7C109D-10ZXIT
• Description: CY7C109D-10ZXIT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C109D-10ZXIT

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (128K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-TSOP I
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Data Retention Characteristics
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)
Read Cycle No. 2 (OE Controlled)
Notes
Document #: 38-05468 Rev. *F
V
I
t
t
13. Full device operation requires linear V
14. Device is continuously selected. OE, CE
15. WE is HIGH for read cycle.
16. Address valid prior to or coincident with CE
CCDR
CDR
R
Parameter
DATA OUT
CURRENT
ADDRESS
DR
[13]
DATA OUT
ADDRESS
SUPPLY
[4]
V
CE
CE
OE
CC
V
CE
CC
1
2
V
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
CC
for Data Retention
PREVIOUS DATA VALID
HIGH IMPEDANCE
Description
t
PU
t
LZCE
CC
1
[15, 16]
ramp from V
= V
1
t
t
LZOE
ACE
IL
transition LOW and CE
, CE
(Over the Operating Range)
t
OHA
50%
2
t
CDR
t
= V
DOE
4.5V
DR
IH
.
to V
t
[14, 15]
CC(min)
AA
V
CE
V
CC
IN
2
1
transition HIGH.
> 50 s or stable at V
> V
t
= V
> V
RC
DATA RETENTION MODE
CC
DR
CC
– 0.3V or V
= 2.0V,
– 0.3V or CE
t
RC
V
DR
Conditions
> 2V
CC(min)
IN
DATA VALID
2
< 0.3V
> 50 s.
< 0.3V,
DATA VALID
t
HZOE
4.5V
t
R
t
HZCE
Min
t
2.0
t
PD
RC
0
CY7C1009D
50%
CY7C109D
IMPEDANCE
Max
3
Page 6 of 12
HIGH
Unit
mA
ns
ns
V
I
I
CC
SB
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