CY7C1315BV18-200BZC Cypress Semiconductor Corp, CY7C1315BV18-200BZC Datasheet - Page 16

• Manufacturer Part Number: CY7C1315BV18-200BZC
• Description: SRAM (Static RAM)
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1315BV18-200BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 38-05620 Rev. *C
TAP AC Switching Characteristics
TAP Timing and Test Conditions
t
Output Times
t
t
CH
TDOV
TDOX
Parameter
TDO
Test Mode Select
TMS
Test Clock
TCK
Test Data-In
TDI
Test Data-Out
TDO
Z
Capture Hold after Clock Rise
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
0
= 50Ω
(a)
GND
0.9V
C
50Ω
L
= 20 pF
[14]
Over the Operating Range
Description
t
TMSS
t
TDIS
t
TH
0V
t
TDOV
t
TL
t
t
TMSH
TDIH
[13, 14]
(continued)
1.8V
t
TCYC
t
TDOX
ALL INPUT PULSES
0.9V
Min.
5
0
CY7C1313BV18
CY7C1315BV18
CY7C1311BV18
CY7C1911BV18
Max.
10
Page 16 of 28
Unit
ns
ns
ns
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