CY7C1315CV18-250BZI Cypress Semiconductor Corp, CY7C1315CV18-250BZI Datasheet - Page 20

CY7C1315CV18-250BZI

CY7C1315CV18-250BZI

Manufacturer Part Number
CY7C1315CV18-250BZI
Description
CY7C1315CV18-250BZI
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1315CV18-250BZI

Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
18M (512K x 36)
Speed
250MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
-40°C ~ 85°C
Package / Case
165-LFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1315CV18-250BZI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Power Up Sequence in QDR-II SRAM
QDR-II SRAMs must be powered up and initialized in a
predefined manner to prevent undefined operations.
Power Up Sequence
Document Number: 001-07165 Rev. *D
Apply power and drive DOFF either HIGH or LOW (all other
inputs can be HIGH or LOW).
Provide stable DOFF (HIGH), power, and clock (K, K) for 1024
cycles to lock the DLL.
Apply V
Apply V
Drive DOFF HIGH.
V
DD
/
DOFF
V
DD
DDQ
DDQ
before V
K
K
before V
DDQ
REF
.
or at the same time as V
Unstable Clock
Clock Start (Clock Starts after
V
DD
Figure 3. Power Up Waveforms
/
V
REF
DDQ
.
V
Stable (< +/- 0.1V DC per 50ns )
DD
/
V
DLL Constraints
DDQ
DLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as t
The DLL functions at frequencies down to 120 MHz.
If the input clock is unstable and the DLL is enabled, then the
DLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. To avoid this, provide1024 cycles stable clock
to relock to the desired clock frequency.
Fix High (or tie to V DDQ )
> 1024 Stable clock
Stable)
CY7C1313CV18, CY7C1315CV18
CY7C1311CV18, CY7C1911CV18
Start Normal
Operation
KC Var
Page 20 of 31
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