CY7C1339G-133AXCT Cypress Semiconductor Corp, CY7C1339G-133AXCT Datasheet - Page 7

CY7C1339G-133AXCT

CY7C1339G-133AXCT

Manufacturer Part Number
CY7C1339G-133AXCT
Description
CY7C1339G-133AXCT
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1339G-133AXCT

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
4M (128K x 32)
Speed
133MHz
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1339G-133AXCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1339G-133AXCT
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
ZZ Mode Electrical Characteristics
Truth Table
Document Number: 38-05520 Rev. *I
I
t
t
t
t
Deselect cycle, power-down
Deselect cycle, power-down
Deselect cycle, power-down
Deselect cycle, power-down
Deselect cycle, power-down
Snooze mode, power-down
READ cycle, begin burst
READ cycle, begin burst
WRITE cycle, begin burst
READ cycle, begin burst
READ cycle, begin burst
READ cycle, continue burst
READ cycle, continue burst
READ cycle, continue burst
READ cycle, continue burst
WRITE cycle, continue burst
WRITE cycle, continue burst
READ cycle, suspend burst
READ cycle, suspend burst
READ cycle, suspend burst
READ cycle, suspend burst
WRITE cycle, suspend burst
WRITE cycle, suspend burst
Notes
DDZZ
ZZS
ZZREC
ZZI
RZZI
2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
3. WRITE = L when any one or more byte write enable signals (BW
4. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
5. CE
6. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW
7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is
Parameter
(BW
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a
don't care for the remainder of the write cycle.
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
1
, CE
A
, BW
Operation
2
, and CE
B
, BW
[2, 3, 4, 5, 6, 7]
C
, BW
Snooze mode standby current
Device operation to ZZ
ZZ recovery time
ZZ active to snooze current
ZZ Inactive to exit snooze current
3
are available only in the TQFP package. BGA package has only 2 chip selects CE
D
), BWE, GW = H.
Add. Used CE
External
External
External
External
External
Current
Current
Current
Current
Current
Current
Description
None
None
None
None
None
None
Next
Next
Next
Next
Next
Next
H
H
H
H
H
X
L
X
X
H
X
X
X
H
X
L
L
L
L
L
L
L
L
1
CE
X
X
X
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
L
L
X
X
A
2
, BW
CE
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
B
, BW
3
ZZ > V
ZZ > V
ZZ < 0.2 V
This parameter is sampled
This parameter is sampled
ZZ
C
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
, BW
D
ADSP
Test Conditions
) and BWE = L or GW = L. WRITE = H when all byte write enable signals
DD
DD
H
H
X
H
H
H
H
H
X
H
X
H
H
H
X
X
L
L
L
L
X
X
X
– 0.2 V
– 0.2 V
ADSC
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
1
and CE
ADV WRITE OE CLK
[A: D]
X
X
X
X
X
X
X
X
X
X
X
H
H
H
H
H
H
L
L
L
L
L
L
2
. Writes may occur only on subsequent clocks
.
2t
Min
X
X
X
X
X
X
X
X
H
H
H
H
H
H
H
H
H
H
L
L
L
L
L
CYC
0
X
X
X
X
X
X
H
X
H
H
H
X
X
H
H
X
X
L
L
L
L
L
L
2t
2t
Max
40
CYC
CYC
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
X
CY7C1339G
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Tri-state
Page 7 of 21
DQ
Unit
mA
Q
Q
Q
Q
Q
Q
D
D
D
D
D
ns
ns
ns
ns
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