CY7C1370D-200AXCT Cypress Semiconductor Corp, CY7C1370D-200AXCT Datasheet - Page 11

• Manufacturer Part Number: CY7C1370D-200AXCT
• Description: CY7C1370D-200AXCT
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1370D-200AXCT

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Partial Write Cycle Description
The Partial Write Cycle Description follows.
Document Number: 38-05555 Rev. *K
Read
Write – No bytes written
Write Byte a – (DQ
Write Byte b – (DQ
Write Bytes b, a
Write Byte c – (DQ
Write Bytes c, a
Write Bytes c, b
Write Bytes c, b, a
Write Byte d – (DQ
Write Bytes d, a
Write Bytes d, b
Write Bytes d, b, a
Write Bytes d, c
Write Bytes d, c, a
Write Bytes d, c, b
Write All Bytes
Read
Write – No Bytes Written
Write Byte a – (DQ
Write Byte b – (DQ
Write Both Bytes
Note
8. Table only lists a partial listing of the byte write combinations. Any Combination of BW
byte write is active.
Function (CY7C1370D)
c
a
b
d
a
b
and DQP
and DQP
and DQP
and DQP
and DQP
and DQP
Function (CY7C1372D)
c
a
d
a
b
b
)
)
)
)
)
)
[1, 2, 3, 8]
WE
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
is valid Appropriate write will be done based on which
BW
WE
X
H
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
L
L
L
L
d
BW
BW
CY7C1370D, CY7C1372D
H
H
H
H
H
H
H
H
X
H
H
L
L
L
L
L
L
L
L
x
L
L
c
b
BW
BW
X
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
H
H
L
L
x
b
a
Page 11 of 29
BW
X
H
H
H
H
H
H
H
H
L
L
L
L
L
L
L
L
a
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