CY7C1380D-167BZC Cypress Semiconductor Corp, CY7C1380D-167BZC Datasheet - Page 19

• Manufacturer Part Number: CY7C1380D-167BZC
• Description: CY7C1380D-167BZC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1380D-167BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. For user guidelines, not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage on V
Supply Voltage on V
DC Voltage Applied to Outputs
in Tri-State ...........................................–0.5V to V
Electrical Characteristics
Notes
Document #: 38-05543 Rev. *F
V
V
V
V
V
V
I
I
I
I
I
I
I
17. Overshoot: V
18. TPower up: Assumes a linear ramp from 0v to V
Parameter
X
OZ
DD
SB1
SB2
SB3
SB4
DD
DDQ
OH
OL
IH
IL
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
except ZZ and MODE
Input Current of MODE
Input Current of ZZ
Output Leakage Current GND ≤ V
V
Current
Automatic CE
Power Down
Current—TTL Inputs
Automatic CE Power
Down Current-CMOS
Inputs
Automatic CE
Power Down
Current—CMOS Inputs
Automatic CE
Power Down
Current—TTL Inputs
IH
DD
(AC) < V
Operating Supply
Description
DD
DDQ
DD
Relative to GND ........–0.3V to +4.6V
+1.5V (pulse width less than t
Relative to GND ...... –0.3V to +V
[17]
[17]
Over the Operating Range
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O, I
for 2.5V I/O, I
for 3.3V I/O, I
for 2.5V I/O, I
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O
for 2.5V I/O
GND ≤ V
Input = V
Input = V
Input = V
Input = V
V
f = f
V
V
f = f
V
V
V
V
f = f
V
V
DD
DD
DD
IN
DD
IN
DD
IN
DD
IN
(min.) within 200 ms. During this time V
MAX
≥ V
MAX
≤ 0.3V or V
≤ 0.3V or V
MAX
≥ V
= Max., I
= Max, Device Deselected,
= Max, Device Deselected,
= Max, Device Deselected, or
= Max, Device Deselected,
IH
IH
CYC
= 1/t
= 1/t
= 1/t
I
SS
DD
SS
DD
I
DDQ
or V
or V
≤ V
≤ V
/2), undershoot: V
CYC
CYC
CYC
OUT
OH
OH
OL
OL
DDQ
DDQ,
+ 0.5V
IN
IN
IN
IN
= 8.0 mA
= 1.0 mA
≤ V
≤ V
= –4.0 mA
= –1.0 mA
> V
= 0 mA,
> V
DD
Output Disabled
IL
IL
DDQ
Test Conditions
DDQ
, f = 0
[17, 18]
IL
– 0.3V, f = 0
– 0.3V
(AC) > –2V (pulse width less than t
DC Input Voltage ................................... –0.5V to V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Commercial
Industrial
Range
IH
< V
All speeds
All speeds
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
4.0-ns cycle, 250 MHz
5.0-ns cycle, 200 MHz
6.0-ns cycle, 167 MHz
DD
and V
–40°C to +85°C
Temperature
0°C to +70°C
DDQ
Ambient
< V
CY7C1380D, CY7C1382D
CY7C1380F, CY7C1382F
DD
CYC
.
/2).
3.3V –5%/+10% 2.5V – 5%
3.135
3.135
2.375
–0.3
–0.3
Min
–30
2.4
2.0
2.0
1.7
–5
–5
–5
V
DD
V
V
DD
DD
2.625
Max
V
350
300
275
160
150
140
135
130
125
3.6
0.4
0.4
0.8
0.7
30
70
80
+ 0.3V
+ 0.3V
DD
5
5
5
Page 19 of 34
DD
to V
V
DDQ
+ 0.5V
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
μA
μA
μA
μA
μA
μA
V
V
V
V
V
V
V
V
V
V
V
DD
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