CY7C1380D-167BZC Cypress Semiconductor Corp, CY7C1380D-167BZC Datasheet - Page 23

• Manufacturer Part Number: CY7C1380D-167BZC
• Description: CY7C1380D-167BZC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1380D-167BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Switching Waveforms
Document #: 38-05543 Rev. *F
Note
26. On this diagram, when CE is LOW: CE
Data Out (Q)
GW, BWE,
ADDRESS
ADSC
ADSP
BWx
ADV
CLK
OE
CE
t
ADS
t AS
t CES
A1
t
ADH
t AH
t CEH
t
CH
High-Z
t CYC
t WES
t
CL
Single READ
t CLZ
t WEH
t CO
1
is LOW, CE
t ADS
A2
Q(A1)
t ADH
t OEHZ
2
t ADVS
Figure 10. Read Cycle Timing
is HIGH and CE
t ADVH
t OELZ
t OEV
Q(A2)
DON’T CARE
t DOH
t CO
3
is LOW. When CE is HIGH: CE
Q(A2 + 1)
ADV
suspends
burst.
UNDEFINED
Q(A2 + 2)
[26]
BURST READ
1
is HIGH or CE
CY7C1380D, CY7C1382D
Q(A2 + 3)
CY7C1380F, CY7C1382F
2
is LOW or CE
A3
Q(A2)
Burst continued with
new base address
Burst wraps around
to its initial state
Q(A2 + 1)
3
t CHZ
Deselect
cycle
is HIGH.
Page 23 of 34
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