DSPIC30F2010-20E/SO Microchip Technology, DSPIC30F2010-20E/SO Datasheet - Page 49
DSPIC30F2010-20E/SO
Manufacturer Part Number
DSPIC30F2010-20E/SO
Description
IC,DSP,16-BIT,CMOS,SOP,28PIN,PLASTIC
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.DSPIC30F2011-20IP.pdf
(26 pages)
2.DSPIC30F2010-20ISO.pdf
(202 pages)
3.DSPIC30F2010-20ISO.pdf
(6 pages)
4.DSPIC30F2010-20ISO.pdf
(26 pages)
Specifications of DSPIC30F2010-20E/SO
Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, Motor Control PWM, QEI, POR, PWM, WDT
Number Of I /o
20
Program Memory Size
12KB (4K x 24)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 6x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
28-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
XLT28SO-1 - SOCKET TRANSITION 28SOIC 300MIL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSPIC30F2010-20E/SO
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
- DSPIC30F2011-20IP PDF datasheet
- DSPIC30F2010-20ISO PDF datasheet #2
- DSPIC30F2010-20ISO PDF datasheet #3
- DSPIC30F2010-20ISO PDF datasheet #4
- Current page: 49 of 202
- Download datasheet (3Mb)
7.0
The Data EEPROM Memory is readable and writable
during normal operation over the entire V
data EEPROM memory is directly mapped in the
program memory address space.
The four SFRs used to read and write the program
Flash memory are used to access data EEPROM
memory as well. As described in
Program
• NVMCON
• NVMADR
• NVMADRU
• NVMKEY
The EEPROM data memory allows read and write of
single words and 16-word blocks. When interfacing to
data memory, NVMADR, in conjunction with the
NVMADRU register, is used to address the EEPROM
location being accessed. TBLRDL and TBLWTL
instructions are used to read and write data EEPROM.
The dsPIC30F devices have up to 1 Kbyte of data
EEPROM, with an address range from 0x7FFC00 to
0x7FFFFE.
A word write operation should be preceded by an erase
of the corresponding memory location(s). The write
typically requires 2 ms to complete, but the write time
will vary with voltage and temperature.
© 2011 Microchip Technology Inc.
Note:
DATA EEPROM MEMORY
Memory”, these registers are:
This data sheet summarizes features of
this group of dsPIC30F devices and is not
intended to be a complete reference
source. For more information on the CPU,
peripherals, register descriptions and
general device functionality, refer to the
“dsPIC30F Family Reference Manual”
(DS70046). For more information on the
device instruction set and programming,
refer to the “16-bit MCU and DSC Pro-
grammer’s
(DS70157).
Reference
Section 6.0 “Flash
DD
range. The
Manual”
A program or erase operation on the data EEPROM
does not stop the instruction flow. The user is respon-
sible for waiting for the appropriate duration of time
before initiating another data EEPROM write/erase
operation. Attempting to read the data EEPROM while
a programming or erase operation is in progress results
in unspecified data.
Control bit WR initiates write operations, similar to pro-
gram Flash writes. This bit cannot be cleared, only set,
in software. This bit is cleared in hardware at the com-
pletion of the write operation. The inability to clear the
WR bit in software prevents the accidental or
premature termination of a write operation.
The WREN bit, when set, will allow a write operation.
On power-up, the WREN bit is clear. The WRERR bit is
set when a write operation is interrupted by a MCLR
Reset, or a WDT Time-out Reset, during normal oper-
ation. In these situations, following Reset, the user can
check the WRERR bit and rewrite the location. The
address register NVMADR remains unchanged.
7.1
A TBLRD instruction reads a word at the current pro-
gram word address. This example uses W0 as a
pointer to data EEPROM. The result is placed in
register W4, as shown in
EXAMPLE 7-1:
MOV
MOV
MOV
TBLRDL [ W0 ], W4
Note:
Reading the Data EEPROM
#LOW_ADDR_WORD,W0
#HIGH_ADDR_WORD,W1
W1
Interrupt flag bit NVMIF in the IFS0 regis-
ter is set when write is complete. It must
be cleared in software.
,
TBLPAG
dsPIC30F2010
DATA EEPROM READ
Example
; Init Pointer
; read data EEPROM
7-1.
DS70118J-page 49
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