BAT85 AMO NXP Semiconductors, BAT85 AMO Datasheet - Page 2

• Manufacturer Part Number: BAT85 AMO
• Description: Schottky (Diodes & Rectifiers) DIODE SCHOTTKY
• Manufacturer: NXP Semiconductors

Specifications of BAT85 AMO

• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A @ Ta=50C
• Max Surge Current: 5 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: Through Hole
• Package / Case: DO-34
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAT85,133

NXP Semiconductors
FEATURES
• Low forward voltage
• Guard ring protected
• Hermetically-sealed leaded glass
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2000 May 25
V
I
I
I
I
T
T
T
SYMBOL
F
F(AV)
FRM
FSM
package.
stg
j
amb
R
Schottky barrier diode
continuous reverse voltage
continuous forward current
average forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
operating ambient temperature
PARAMETER
DESCRIPTION
Planar Schottky barrier diode with an integrated protection ring against static
discharges, encapsulated in a hermetically-sealed subminiature SOD68
(DO-34) package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch.
Fig.1 Simplified outline (SOD68; DO-34), pin configuration and symbol.
handbook, halfpage
PCB mounting, lead length = 4 mm;
V
T
t
t
p
p
amb
RWM
≤ 1 s; δ 0.5
≤ 10 ms
= 50 °C; see Fig.2
= 25 V; a = 1.57; δ = 0.5;
2
k
CONDITIONS
−
−
−
−
−
−65
−
−65
MIN.
a
Product data sheet
30
200
200
300
5
+150
125
+125
MAX.
MAM193
BAT85
V
mA
mA
mA
A
°C
°C
°C
UNIT