BAT85 AMO NXP Semiconductors, BAT85 AMO Datasheet - Page 3

• Manufacturer Part Number: BAT85 AMO
• Description: Schottky (Diodes & Rectifiers) DIODE SCHOTTKY
• Manufacturer: NXP Semiconductors

Specifications of BAT85 AMO

• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A @ Ta=50C
• Max Surge Current: 5 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA @ 25 V
• Operating Temperature Range: + 125 C
• Mounting Style: Through Hole
• Package / Case: DO-34
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAT85,133

NXP Semiconductors
ELECTRICAL CHARACTERISTICS
T
THERMAL CHARACTERISTICS
Note
1. Refer to SOD68 standard mounting conditions.
2000 May 25
V
I
t
C
R
SYMBOL
SYMBOL
amb
R
rr
F
Schottky barrier diode
d
th j-a
= 25 °C; unless otherwise specified.
forward voltage
reverse current
reverse recovery time
diode capacitance
thermal resistance from junction to ambient
PARAMETER
PARAMETER
see Fig.3
V
when switched from I
I
measured at I
f = 1 MHz; V
note 1
3
R
R
I
I
I
I
I
= 10 mA; R
F
F
F
F
F
= 25 V; see Fig.4
= 0.1 mA
= 1 mA
= 10 mA
= 30 mA
= 100 mA
CONDITIONS
CONDITIONS
R
L
R
= 1 V; see Fig.5
= 100 Ω;
= 1 mA; see Fig.6
F
= 10 mA to
240
320
400
500
800
2
4
10
VALUE
MAX.
Product data sheet
320
BAT85
mV
mV
mV
mV
mV
μA
ns
pF
UNIT
UNIT
K/W