BAT85 AMO NXP Semiconductors, BAT85 AMO Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BAT85 AMO
Manufacturer Part Number
BAT85 AMO
Description
Schottky (Diodes & Rectifiers) DIODE SCHOTTKY
Manufacturer
NXP Semiconductors
Datasheet
1.BAT85_AMO.pdf
(8 pages)
Specifications of BAT85 AMO
Product
Schottky Diodes
Peak Reverse Voltage
30 V
Forward Continuous Current
0.2 A @ Ta=50C
Max Surge Current
5 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
0.8 V @ 0.1 A
Maximum Reverse Leakage Current
2 uA @ 25 V
Operating Temperature Range
+ 125 C
Mounting Style
Through Hole
Package / Case
DO-34
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BAT85,133
NXP Semiconductors
GRAPHICAL DATA
2000 May 25
handbook, halfpage
handbook, halfpage
I F(AV)
Schottky barrier diode
(nA)
(mA)
I R
(1) T
(2) T
(3) T
Fig.4
10
10
10
10
10
250
200
150
100
10
50
amb
amb
amb
1
−1
5
4
3
2
0
0
0
= 85 °C.
= 25 °C.
= −40 °C.
Reverse current as a function of reverse
voltage; typical values.
Fig.2 Derating curve.
(3)
(1)
(2)
50
10
100
20
T
amb
V R (V)
MRA540
( C)
o
MGC682
150
30
4
handbook, halfpage
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
f = 1 MHz.
Fig.5
(mA)
(pF)
C d
10
I F
10
10
12
10
−1
amb
amb
amb
8
4
0
1
3
2
0
0
(1)
= 125 °C.
= 85 °C.
= 25 °C.
Forward current as a function of forward
voltage; typical values.
Diode capacitance as a function of reverse
voltage; typical values.
(2) (3)
0.4
10
(1) (2) (3)
0.8
20
Product data sheet
V R (V)
V F (V)
MGC681
MLD358
BAT85
1.2
30