DAP202KT146 Rohm Semiconductor, DAP202KT146 Datasheet - Page 2

• Manufacturer Part Number: DAP202KT146
• Description: DIODE SWITCH 80V 100MA SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of DAP202KT146

• Diode Type: Standard
• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 70V
• Current - Average Rectified (io) (per Diode): 100mA
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Anode
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Forward Current If(av): 100mA
• Repetitive Reverse Voltage Vrrm Max: 80V
• Forward Voltage Vf Max: 1.2V
• Reverse Recovery Time Trr Max: 4ns
• Forward Surge Current Ifsm Max: 4A
• Operating: RoHS Compliant
• Product: Switching Diodes
• Peak Reverse Voltage: 80 V
• Forward Continuous Current: 300 mA
• Max Surge Current: 4 A
• Configuration: Dual Common Anode
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.2 V
• Maximum Reverse Leakage Current: 0.1 uA
• Maximum Power Dissipation: 200 mW
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DAP202KT146TR

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DAP202K
100
10
20
15
10
100
900
890
880
870
860
850
1
0.1
5
0
10
0.1
1
0
100 200 300 400 500 600 700 800 900 1000
FORWARD VOLTAGE：VF(mV)
Ta=150℃
IFSM-t CHARACTERISTICS
VF-IF CHARACTERISTICS
VF DISPERSION MAP
IFSM DISRESION MAP
Ta=125℃
1
AVE:877.0mV
TIME:t(ms)
AVE:2.50A
Ta=75℃
Ifsm
Ifsm
10
8.3ms
IF=100mA
Ta=25℃
n=30pcs
Ta=-25℃
t
1cyc
Ta=25℃
100
100000
1000
10000
100
100
1000
90
80
70
60
50
40
30
20
10
10
10
100
0
9
8
7
6
5
4
3
2
1
0
0.1
1
10
0.001
1
0
0.01
10
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Rth-t CHARACTERISTICS
trr DISPERSION MAP
IR DISPERSION MAP
20
2/2
0.1
AVE:17.93nA
Mounted on epoxy board
IM=10mA
TIME:t(s)
30
AVE:1.93ns
1ms
1
Ta=125℃
300us
40
Ta=75℃
Ta=-25℃
Ta=25℃
time
10
50
IF=100mA
Ta=25℃
n=10pcs
VR=70V
RL=50Ω
Ta=25℃
n=10pcs
Rth(j-a)
Rth(j-c)
100
IF=5mA
VR=6V
60
Ta=150℃
1000
70
10
0.1
10
9
8
7
6
5
4
3
2
1
0
5
4
3
2
1
0
10
1
9
8
7
6
5
4
3
2
1
0
1
0
IFSM-CYCLE CHARACTERISTICS
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
C=200pF
AVE:1.32kV
ESD DISPERSION MAP
5
R=0Ω
Ct DISPERSION MAP
NUMBER OF CYCLES
AVE:1.80pF
2011.03 - Rev.B
Ifsm
10
10
Data Sheet
8.3ms
AVE:5.47kV
R=1.5kΩ
C=100pF
1cyc
15
Ta=25℃
n=10pcs
f=1MHz
VR=6V
8.3ms
f=1MHz
20
100