DAN217T146 Rohm Semiconductor, DAN217T146 Datasheet
Home Discrete Semiconductor Products Diodes, Rectifiers - Arrays DAN217T146
Manufacturer Part Number
DAN217T146
Description
DIODE SWITCH 80V 100MA SOT-346
Manufacturer
Rohm Semiconductor
Specifications of DAN217T146
Diode Type
Standard
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 70V
Current - Average Rectified (io) (per Diode)
100mA
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Series Connection
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Forward Current If(av)
100mA
Repetitive Reverse Voltage Vrrm Max
80V
Forward Voltage Vf Max
1.2V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
4A
Diode Case
RoHS Compliant
Product
Switching Diodes
Peak Reverse Voltage
80 V
Forward Continuous Current
100 mA
Max Surge Current
300 mA
Configuration
Dual Series
Recovery Time
4 ns
Forward Voltage Drop
1.2 V
Maximum Reverse Leakage Current
0.1 uA
Maximum Power Dissipation
200 mW
Operating Temperature Range
+ 150 C
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Diode Case Style
TO-236
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DAN217T146TR
Available stocks
Manufacturer:
Rohm Semiconductor
Ultra high speed switching
1) Small mold type. (SMD3)
2) High reliability
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Forward current (Single)
Average rectified forward current (Single)
Surge current (t=1us)
Power dissipation
Junction temperature
Storage temperature
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
DAN217
Switching diode
Applications
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
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© 2011 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Taping specifications (Unit : mm)
Symbol
Symbol
I
Tstg
V
surge
V
I
Pd
V
Ct
trr
Tj
FM
Io
I
RM
R
R
F
3.2±0.1
4.0±0.1
Dimensions (Unit : mm)
Min.
-
-
-
-
55 to 150
0.4
2.0±0.05
-0.05
+0.1
(2)
0.95
Limits
300
100
200
150
Typ.
2.9±0.2
80
80
Each lead has same dimension
1.9± 0.2
4
各リー ドと も
1/2
-
-
-
-
同 寸法
(3)
0.95
4.0±0.1
Max.
(1)
1.2
0.1
3.5
4
φ1.5±0.1
0
JEDEC :S0T-346
JEITA : SC-59
ROHM : SMD3
0.15
week code
1.1± 0.2
1.1
mW
Unit
Unit
0.8± 0.1
mA
mA
+0.1
-0.06
°C
°C
μA
pF
ns
V
V
A
V
0.2
0.1
0.01
φ1.05MIN
0~0.1
I
V
V
V
F
=100mA
R
R
R
=70V
=6V , f=1MHz
=6V , IF=5mA , RL=50Ω
Structure
Land size figure (Unit : mm)
Conditions
SMD3
0.8MIN.
Data Sheet
0.95
1.9
2011.03 - Rev.C
0.3±0.1
1.35±0.1
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DAN217T146 Summary of contents
Switching diode DAN217 Applications Ultra high speed switching Features 1) Small mold type. (SMD3) 2) High reliability Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current (Single) Average rectified forward current ...
DAN217 100 Ta=75℃ Ta=125℃ 10 Ta=150℃ Ta=-25℃ 1 0.1 0 100 200 300 400 500 600 700 800 900 100 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 950 Ta=25℃ IF=100mA 940 n=30pcs 930 920 910 AVE:921.7mV 900 VF DISPERSION MAP 20 1cyc Ifsm ...
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