TIC226N-S Bourns Inc., TIC226N-S Datasheet - Page 4

• Manufacturer Part Number: TIC226N-S
• Description: Triacs 800V 8A TRIAC
• Manufacturer: Bourns Inc.

Specifications of TIC226N-S

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 70 A
• Off-state Leakage Current @ Vdrm Idrm: 2 mA
• Gate Trigger Voltage (vgt): 2 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 30 mA
• Forward Voltage Drop: 2.1 V @ 12 A
• Mounting Style: Through Hole
• Package / Case: TO-220
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TIC226 SERIES
SILICON TRIACS
NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed
4
50 Hz
so that the off-state-voltage duration is approximately 800 µs.
C1
R1
DUT
L1
PARAMETER MEASUREMENT INFORMATION
I
MT2
V
V
MT2
R
AC
I
G
G
Note A
See
Figure 7.
V
V
I
MT2
I
MT2
AC
G
R O D U C T
Specifications are subject to change without notice.
I
TRM
APRIL 1971 - REVISED SEPTEMBER 2002
V
DRM
dv/dt
I N F O R M A T I O N
10%
63%
PMC2AA