BYV32E-100,127 NXP Semiconductors, BYV32E-100,127 Datasheet - Page 4

• Manufacturer Part Number: BYV32E-100,127
• Description: DIODE RECT UFAST 100V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BYV32E-100,127

• Package / Case: TO-220AB-3
• Voltage - Forward (vf) (max) @ If: 1.15V @ 20A
• Current - Reverse Leakage @ Vr: 30µA @ 100V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 100 V
• Forward Voltage Drop: 1.15 V
• Recovery Time: 25 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 137 A
• Reverse Current Ir: 30 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3435-5; 934011670127; BYV32E-100

Philips Semiconductors
August 2001
Rectifier diodes
ultrafast, rugged
Fig.9. Typical and maximum forward characteristic
1000
0.01
Fig.8. Maximum I
30
20
10
100
Fig.7. Maximum t
0.1
0
10
10
1
1
0
1
IF / A
1
trr / ns
Irrm / A
per diode; I
Tj=150 C
Tj=25 C
0.5
F
typ
rrm
= f(V
rr
-dIF/dt (A/us)
dIF/dt (A/us)
at T
IF=1A
VF / V
at T
10
10
F
); parameter T
j
j
= 25 ˚C; per diode
IF=10A
IF=10A
= 25 ˚C; per diode
1
max
IF=1A
j
100
1.5
100
4
Fig.11. Transient thermal impedance; per diode;
Fig.10. Maximum Q
0.001
100
1.0
0.01
10
0.1
10
1
1.0
1us
Qs / nC
Transient thermal impedance, Zth j-mb (K/W)
10us
BYV32E, BYV32EB series
100us
Z
pulse width, tp (s)
th j-mb
IF=10A
-dIF/dt (A/us)
1ms
2A
1A
s
5A
at T
= f(t
10
P
D
10ms 100ms
j
p
= 25 ˚C; per diode
).
t
p
Product specification
T
D =
BYV32E
t
T
p
t
1s
Rev 1.300
100
10s