STTH806TTI STMicroelectronics, STTH806TTI Datasheet - Page 4

• Manufacturer Part Number: STTH806TTI
• Description: DIODE BOOST TANDEM 600V TO-220AB
• Manufacturer: STMicroelectronics
• Series: TURBOSWITCH™r

Specifications of STTH806TTI

• Voltage - Forward (vf) (max) @ If: 3.6V @ 8A
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Current - Average Rectified (io) (per Diode): 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Reverse Recovery Time (trr): 30ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads) Insulated
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Series
• Reverse Voltage: 600 V
• Forward Voltage Drop: 3.6 V
• Recovery Time: 30 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 80 A
• Reverse Current Ir: 10 uA
• Power Dissipation: 27 W
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5413-5; STTH806TTI

STTH806TTI
4/5
Fig. 7:
values).
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 9: Transient peak forward voltage versus
dI
20
18
16
14
12
10
8
6
4
2
0
F
0
VFP(V)
0
/dt (90% confidence).
S factor
Tj=125°C
IF=IF(av)
50
50 100 150 200 250 300 350 400 450 500
Softness factor versus dI
100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
dIF/dt(A/µs)
F
/dt (typical
IF<2xIF(av)
VR=400V
Tj=125°C
Fig. 8: Relative variation of dynamic parameters
versus junction temperature (reference: Tj = 125°C).
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 10: Forward recovery time versus dI
confidence).
300
250
200
150
100
50
0
25
0
tfr(ns)
50 100 150 200 250 300 350 400 450 500
50
S factor
IRM
dIF/dt(A/µs)
Tj(°C)
75
100
VFR=1.1*VF max.
Tj=125°C
IF=IF(av)
F
/dt (90%
125