BTA416Y-800C NXP Semiconductors, BTA416Y-800C Datasheet - Page 2

• Manufacturer Part Number: BTA416Y-800C
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA416Y-800C

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 176 A
• Off-state Leakage Current @ Vdrm Idrm: 2 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 35 mA
• Holding Current (ih Max): 35 mA
• Forward Voltage Drop: 1.5 V @ 20 A
• Mounting Style: Through Hole
• Package / Case: TO-220
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA416Y-800C,127

NXP Semiconductors
Table 1.
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BTA416Y-800C
Product data sheet
Symbol
V
I
I
Static characteristics
I
Pin
1
2
3
mb
Type number
BTA416Y-800C
TSM
T(RMS)
GT
DRM
Symbol Description
T1
T2
G
n.c.
Quick reference data
Pinning information
Ordering information
Parameter
repetitive peak off-state
voltage
non-repetitive peak
on-state current
RMS on-state current
gate trigger current
1.4 Quick reference data
main terminal 1
main terminal 2
gate
mounting base; isolated
Package
Name
TO-220AB
Conditions
full sine wave; T
t
full sine wave; T
see
V
T
V
T
V
T
Description
plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3-lead TO-220
All information provided in this document is subject to legal disclaimers.
p
j
j
j
D
D
D
= 20 ms; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 12 V; I
= 12 V; I
= 12 V; I
Figure
Rev. 3 — 24 June 2011
Simplified outline
1; see
T
T
T
= 0.1 A; T2+ G+;
= 0.1 A; T2+ G-;
= 0.1 A; T2- G-;
SOT78D (TO-220AB)
Figure 7
Figure 7
Figure 7
Figure
j(init)
mb
Figure
≤ 108 °C;
= 25 °C;
1 2
4; see
mb
2; see
3
Figure 5
Figure 3
Graphic symbol
BTA416Y-800C
Min
-
-
-
2
2
2
T2
sym051
Typ
-
-
-
-
-
-
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
T1
G
Max
800
160
16
35
35
35
Version
SOT78D
Unit
V
A
A
mA
mA
mA
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